BYD57G datasheet, PDF - EEWORLD Datasheet

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BYD57G: DescriptionRectifier Diode,; CategoryDiscrete semiconductor diode; File Size118KB，3 Pages; ManufacturerEIC [EIC discrete Semiconductors]

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BYD57G Overview

Rectifier Diode,

BYD57G Parametric

Parameter Name	Attribute value
Maker	EIC [EIC discrete Semiconductors]
Reach Compliance Code	compliant
ECCN code	EAR99

BYD57G Preview

Certificate TH97/10561QM

Certificate TW00/17276EM

BYD57D - BYD57V

PRV :

200

1400

Volts

Io :

1.0 - 1.2

Amperes

FEATURES :

Glass passivated

High maximum operating temperature

Low leakage current

Excellent stability

Guaranteed avalanche energy

absorption capability

* Smallest surface mount rectifier outline

* Pb / RoHS Free

ULTRA-FAST SOFT-RECOVERY

CONTROLLED AVALANCHE RECTIFIERS

MELF (Plastic)

Cathode Mark

0.102 (2.6)

0.094 (2.4)

0.022(0.55)

0.205(5.2)

0.189(4.8)

MECHANICAL DATA :

* Case : Molded plastic

* Terminals : Plated Terminals, solderable per

MIL-STD-750 Method 2026

* Polarity : Color band denotes cathode end

* Mounting position : Any

* Weight : 0.116 gram

Dimensions in inches and ( millimeters )

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 °C ambient temperature unless otherwise specifie

RATING

Maximum Repetitive Peak Reverse Voltage

Maximum Continuous Reverse Voltage

Min. Reverse Avalanche Breakdown Voltage @ I

= 0.1 mA

Maximum Average Forward Current

Maximum Non-Repetitive Peak Forward Surge Current (Note 3)

Maximum Repetitive Peak Forward Current at Ttp = 85 °C

Maximum Forward Voltage at I

= 1.0 A ; T

= 25 °C

Maximum Reverse Current at V

RRMmax

Maximum Reverse Recovery Time (Note 4)

Thermal Resistance from Junction to Tie-Point

Thermal Resistance from Junction to Ambient (Note 5)

Junction Temperature Range

Storage Temperature Range

= 25 °C

= 165 °C

SYMBOL

RRM

(BR)R-min

F(AV)

FSM

FRM

R(H)

Trr

th j-tp

th j-a

STG

BYD BYD BYD BYD BYD BYD BYD

UNIT

57D 57G 57J 57K 57M 57U 57V

200

300

400

500

600

700

1.0

(1)

0.4

(2)

8.5

3.6

5.0

100

150

- 65 to + 175

150

2.3

800 1000 1200 1400

900 1100 1300 1500

1.2

(1)

μA

K/W

°C

Notes :

(1) Ttp = 85 °C; see Fig. 1and 2; averaged over any 20 ms period; see also Fig.5 and 6.

(2) Tamb = 60 °C; PCB mounting ; see Fig. 3 and 4; averaged over any 20 ms period; see also Fig.5 and 6.

(3) t=10ms half sine wave; Tj = Tjmax prior to surge; V

= V

RRMmax.

(4) Reverse Recovery Test Conditions :

= 0.5 A, I

= 1.0 A, Irr = 0.25 A.

(5) Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-lay

≥

μm.

Page 1 of 3

Rev. 01 : November 11, 2006

Certificate TH97/10561QM

Certificate TW00/17276EM

RATING AND CHARACTERISTIC CURVES ( BYD57D - BYD57V )

FIG.1 - MAXIMUM PERMISSIBLE AVERAGE FORWARD

CURRENT AS A FUNCTION OF TIE-POINT TEMPERATURE

2.0

FIG.2 - MAXIMUM PERMISSIBLE AVERAGE FORWARD

CURRENT AS A FUNCTION OF TIE-POINT TEMPERATURE

2.0

BYD57D to M

BYD57U to V

AVERAGE FORWARD

CURRENT, I

F(AV)

(A)

1.2

AVERAGE FORWARD

CURRENT, I

F(AV)

(A)

120

160

200

1.6

1.2

0.8

0.4

120

160

200

TIE-POINT TEMPERATURE, Ttp (

FIG.3 - MAXIMUM PERMISSIBLE AVERAGE FORWARD

CURRENT AS A FUNCTION OF AMBIENT TEMPERATURE

AVERAGE FORWARD CURRENT, I

F(AV)

(A)

0.6

TIE-POINT TEMPERATURE, Ttp (

FIG.4 - MAXIMUM PERMISSIBLE AVERAGE FORWARD

CURRENT AS A FUNCTION OF AMBIENT TEMPERATURE

0.6

AVERAGE FORWARD CURRENT, I

F(AV)

(A)

BYD57D to M

0.5

BYD57U to V

0.4

0.3

0.2

0.1

120

160

200

120

160

200

AMBIENT TEMPERATURE, Tamp (

FIG.5 - MAXIMUM STEADY STATE POWER DISSIPATION

AS A FUNCTION OF AVERAGE FORWARD CURRENT

AMBIENT TEMPERATURE, Tamp (

FIG.6 - MAXIMUM STEADY STATE POWER DISSIPATION

AS A FUNCTION OF AVERAGE FORWARD CURRENT

POWER DISSIPATION, P

(W)

a =3 2.5

1.57 1.42

POWER DISSIPATION, P

(W)

BYD57U to V

a =3

2.5

1.57

1.42

BYD57D to M

a = I

F(RMS)

F(AV)

; V

= V

RRMmax

;

= 0.5

0.4

0.8

1.2

1.6

2.0

a = I

F(RMS)

F(AV)

; V

= V

RRMmax

;

= 0.5

0.5

AVERAGE FORWARD CURRENT, I

F(AV)

(A)

AVERAGE FORWARD CURRENT, I

F(AV)

(A)

Page 2 of 3

Rev. 01 : November 11, 2006

Certificate TH97/10561QM

Certificate TW00/17276EM

RATING AND CHARACTERISTIC CURVES ( BYD57D- BYD57V )

FIG.7 - FORWARD CURRENT AS FUNCTION

OF FORWARD VOLTAGE

FIG.8 - FORWARD CURRENT AS FUNCTION

OF FORWARD VOLTAGE

BYD77A to D

BYD77E to G

FORWARD CURRENT, I

(A)

FORWARD CURRENT, I

(A)

= 25 °C

FORWARD VOLTAGE, V

(V)

FORWARD VOLTAGE, V

(V)

FIG.9 - REVERSE CURRENT AS FUNCTION

OF JUNCTION TEMPERATURE

1000

REVERSE CURRENT, I

(μA)

100

RRMmax

200

JUNCTION TEMPERATURE, T

( °C)

Page 3 of 3

Rev. 01 : November 11, 2006

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BYD57G Related Products

	BYD57G	BYD57V
Description	Rectifier Diode,	Rectifier Diode,
Maker	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99

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