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BUZ902D

Description
Power Field-Effect Transistor, 16A I(D), 220V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3
CategoryDiscrete semiconductor    The transistor   
File Size63KB,1 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Download Datasheet Parametric View All

BUZ902D Overview

Power Field-Effect Transistor, 16A I(D), 220V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3

BUZ902D Parametric

Parameter NameAttribute value
MakerTT Electronics plc
package instructionFLANGE MOUNT, O-MBFM-P2
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage220 V
Maximum drain current (ID)16 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-3
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)16 A
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
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