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BDS20

Description
5A, 80V, NPN, Si, POWER TRANSISTOR, TO-257AB, HERMETIC SEALED, METAL, TO220M, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size20KB,2 Pages
ManufacturerSEMELAB
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BDS20 Overview

5A, 80V, NPN, Si, POWER TRANSISTOR, TO-257AB, HERMETIC SEALED, METAL, TO220M, 3 PIN

BDS20 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerSEMELAB
Parts packaging codeTO-257AB
package instructionFLANGE MOUNT, S-MSFM-P3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Shell connectionISOLATED
Maximum collector current (IC)5 A
Collector-emitter maximum voltage80 V
ConfigurationDARLINGTON
Minimum DC current gain (hFE)1000
JEDEC-95 codeTO-257AB
JESD-30 codeS-MSFM-P3
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeSQUARE
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)8 MHz

BDS20 Preview

BDS20 BDS20SMD
BDS21 BDS21SMD
MECHANICAL DATA
Dimensions in mm
1 0.6
0.8
4.6
16.5
3.6
Dia.
1 3 .5
1 0 .6
SILICON PNP
EPITAXIAL BASE IN
TO220 METAL AND
SMD1 CERAMIC SURFACE
MOUNT PACKAGES
FEATURES
1 23
1 3 .7 0
• HERMETIC METAL OR CERAMIC PACKAGES
• HIGH RELIABILITY
1.0
2 .5 4
BSC
2. 70
BSC
• MILITARY AND SPACE OPTIONS
• SCREENING TO CECC LEVELS
3 .6 0 (0 .1 4 2 )
M a x .
0 .8 9
(0 .0 3 5 )
m in .
3 .7 0 (0 .1 4 6 )
3 .7 0 (0 .1 4 6 )
3 .4 1 (0 .1 3 4 )
3 .4 1 (0 .1 3 4 )
4 .1 4 (0 .1 6 3 )
3 .8 4 (0 .1 5 1 )
• FULLY ISOLATED (METAL VERSION)
1
3
0 .7 6
(0 .0 3 0 )
m in .
APPLICATIONS
1 6 .0 2 (0 .6 3 1 )
1 5 .7 3 (0 .6 1 9 )
1 0 .6 9 (0 .4 2 1 )
1 0 .3 9 (0 .4 0 9 )
• POWER LINEAR AND SWITCHING
APPLICATIONS
• GENERAL PURPOSE POWER
2
9 .6
9 .3
1 1 .5
1 1 .2
7 (0
8 (0
8 (0
8 (0
.3 8
.3 6
.4 5
.4 4
1 )
9 )
6 )
4 )
0 .5 0 (0 .0 2 0 )
0 .2 6 (0 .0 1 0 )
TO220M
SMD1
- TO220 Metal Package - Isolated
- Ceramic Surface Mount Package
Pin 2
– Collector
Pin 3
– Emitter
Pin 1
– Base
ABSOLUTE MAXIMUM RATINGS
(T
case
=25°C unless otherwise stated)
V
CBO
V
CEO
V
EBO
I
C(PK)
I
B
P
tot
T
stg
T
j
Semelab plc.
Collector - Base voltage (I
E
= 0)
Collector - Emitter voltage (I
B
= 0)
Emitter - Base voltage (I
C
= 0)
Peak collector current
Base current
Total power dissipation at T
case
£
75°C
Storage Temperature
Junction Temperature
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
BDS20
NPN
80V
80V
5V
5A
0.1A
BDS21
PNP
–80V
–80V
–5V
–5A
–0.1A
50W
–65 to 200°C
200°C
Prelim. 7/00
BDS20 BDS20SMD
BDS21 BDS21SMD
ELECTRICAL CHARACTERISTICS
(Tcase = 25°C unless otherwise stated)
Parameter
I
CBO
I
CEO
I
EBO
V
CEO(sus)*
V
CE(sat)*
V
BE(on)*
h
FE*
Collector cut-off current
(I
E
= 0)
Collector cut-off current
(I
B
= 0)
Emitter cut-off current
(I
C
= 0)
Collector - Emitter
sustaining voltage (I
B
= 0)
Collector - Emitter
saturation voltage
Base - Emitter voltage
DC Current gain
Test Conditions
V
CB
= 80V
V
CE
= 40V
V
EB
= 5V
I
C
= 30mA
I
C
= 3A
I
C
= 5A
I
C
= 3A
I
C
= 0.5A
I
C
= 3A
I
B
= 12mA
I
B
= 20mA
V
CE
= 3V
V
CE
= 3V
V
CE
= 3V
Min.
Typ.
Max.
0.2
0.5
2
Unit
mA
mA
mA
V
120
2
4
2.5
1000
1000
V
V
*Pulsed : Pulse duration = 300
m
s , duty cycle = 1.5%
THERMAL DATA
R
THj-case
R
THj-a
Thermal resistance junction - case
Thermal resistance junction - ambient
Max. 2.5°C/W
Max. 62.5°C/W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 7/00

BDS20 Related Products

BDS20 BDS21 BDS20SMD
Description 5A, 80V, NPN, Si, POWER TRANSISTOR, TO-257AB, HERMETIC SEALED, METAL, TO220M, 3 PIN 5A, 80V, PNP, Si, POWER TRANSISTOR, TO-257AB, HERMETIC SEALED, METAL, TO220M, 3 PIN 5A, 80V, NPN, Si, POWER TRANSISTOR, TO-276AB, HERMETIC SEALED, CERAMIC, SMD1, 3 PIN
Is it lead-free? Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible
Maker SEMELAB SEMELAB SEMELAB
Parts packaging code TO-257AB TO-257AB TO-276AB
package instruction FLANGE MOUNT, S-MSFM-P3 FLANGE MOUNT, S-MSFM-P3 CHIP CARRIER, R-CBCC-N3
Contacts 3 3 3
Reach Compliance Code compliant compliant compliant
ECCN code EAR99 EAR99 EAR99
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
Shell connection ISOLATED ISOLATED COLLECTOR
Maximum collector current (IC) 5 A 5 A 5 A
Collector-emitter maximum voltage 80 V 80 V 80 V
Configuration DARLINGTON DARLINGTON DARLINGTON
Minimum DC current gain (hFE) 1000 1000 1000
JEDEC-95 code TO-257AB TO-257AB TO-276AB
JESD-30 code S-MSFM-P3 S-MSFM-P3 R-CBCC-N3
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 200 °C 200 °C 200 °C
Package body material METAL METAL CERAMIC, METAL-SEALED COFIRED
Package shape SQUARE SQUARE RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT CHIP CARRIER
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN PNP NPN
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO YES
Terminal form PIN/PEG PIN/PEG NO LEAD
Terminal location SINGLE SINGLE BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 8 MHz 8 MHz 8 MHz
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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