BDS20SMD datasheet, PDF - EEWORLD Datasheet

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BDS20SMD: Description5A, 80V, NPN, Si, POWER TRANSISTOR, TO-276AB, HERMETIC SEALED, CERAMIC, SMD1, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size20KB，2 Pages; ManufacturerSEMELAB

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BDS20SMD Overview

5A, 80V, NPN, Si, POWER TRANSISTOR, TO-276AB, HERMETIC SEALED, CERAMIC, SMD1, 3 PIN

BDS20SMD Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	SEMELAB
Parts packaging code	TO-276AB
package instruction	CHIP CARRIER, R-CBCC-N3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	HIGH RELIABILITY
Shell connection	COLLECTOR
Maximum collector current (IC)	5 A
Collector-emitter maximum voltage	80 V
Configuration	DARLINGTON
Minimum DC current gain (hFE)	1000
JEDEC-95 code	TO-276AB
JESD-30 code	R-CBCC-N3
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	8 MHz

BDS20SMD Preview

BDS20 BDS20SMD

BDS21 BDS21SMD

MECHANICAL DATA

Dimensions in mm

1 0.6

0.8

4.6

16.5

3.6

Dia.

1 3 .5

1 0 .6

SILICON PNP

EPITAXIAL BASE IN

TO220 METAL AND

SMD1 CERAMIC SURFACE

MOUNT PACKAGES

FEATURES

1 23

1 3 .7 0

• HERMETIC METAL OR CERAMIC PACKAGES

• HIGH RELIABILITY

1.0

2 .5 4

BSC

2. 70

BSC

• MILITARY AND SPACE OPTIONS

• SCREENING TO CECC LEVELS

3 .6 0 (0 .1 4 2 )

M a x .

0 .8 9

(0 .0 3 5 )

m in .

3 .7 0 (0 .1 4 6 )

3 .4 1 (0 .1 3 4 )

4 .1 4 (0 .1 6 3 )

3 .8 4 (0 .1 5 1 )

• FULLY ISOLATED (METAL VERSION)

0 .7 6

(0 .0 3 0 )

m in .

APPLICATIONS

1 6 .0 2 (0 .6 3 1 )

1 5 .7 3 (0 .6 1 9 )

1 0 .6 9 (0 .4 2 1 )

1 0 .3 9 (0 .4 0 9 )

• POWER LINEAR AND SWITCHING

APPLICATIONS

• GENERAL PURPOSE POWER

9 .6

9 .3

1 1 .5

1 1 .2

7 (0

8 (0

.3 8

.3 6

.4 5

.4 4

1 )

9 )

6 )

4 )

0 .5 0 (0 .0 2 0 )

0 .2 6 (0 .0 1 0 )

TO220M

SMD1

- TO220 Metal Package - Isolated

- Ceramic Surface Mount Package

Pin 2

– Collector

Pin 3

– Emitter

Pin 1

– Base

ABSOLUTE MAXIMUM RATINGS

case

=25°C unless otherwise stated)

CBO

CEO

EBO

C(PK)

tot

stg

Semelab plc.

Collector - Base voltage (I

= 0)

Collector - Emitter voltage (I

= 0)

Emitter - Base voltage (I

= 0)

Peak collector current

Base current

Total power dissipation at T

case

75°C

Storage Temperature

Junction Temperature

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail:

sales@semelab.co.uk

Website:

http://www.semelab.co.uk

BDS20

NPN

80V

0.1A

BDS21

PNP

–80V

–5V

–5A

–0.1A

50W

–65 to 200°C

200°C

Prelim. 7/00

BDS20 BDS20SMD

BDS21 BDS21SMD

ELECTRICAL CHARACTERISTICS

(Tcase = 25°C unless otherwise stated)

Parameter

CBO

CEO

EBO

CEO(sus)*

CE(sat)*

BE(on)*

FE*

Collector cut-off current

= 0)

Collector cut-off current

= 0)

Emitter cut-off current

= 0)

Collector - Emitter

sustaining voltage (I

= 0)

Collector - Emitter

saturation voltage

Base - Emitter voltage

DC Current gain

Test Conditions

= 80V

= 40V

= 5V

= 30mA

= 3A

= 5A

= 3A

= 0.5A

= 3A

= 12mA

= 20mA

= 3V

Min.

Typ.

Max.

0.2

0.5

Unit

120

2.5

1000

*Pulsed : Pulse duration = 300

s , duty cycle = 1.5%

THERMAL DATA

THj-case

THj-a

Thermal resistance junction - case

Thermal resistance junction - ambient

Max. 2.5°C/W

Max. 62.5°C/W

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail:

sales@semelab.co.uk

Website:

http://www.semelab.co.uk

Prelim. 7/00

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BDS20SMD Related Products

	BDS20SMD	BDS20	BDS21
Description	5A, 80V, NPN, Si, POWER TRANSISTOR, TO-276AB, HERMETIC SEALED, CERAMIC, SMD1, 3 PIN	5A, 80V, NPN, Si, POWER TRANSISTOR, TO-257AB, HERMETIC SEALED, METAL, TO220M, 3 PIN	5A, 80V, PNP, Si, POWER TRANSISTOR, TO-257AB, HERMETIC SEALED, METAL, TO220M, 3 PIN
Is it lead-free?	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible
Maker	SEMELAB	SEMELAB	SEMELAB
Parts packaging code	TO-276AB	TO-257AB	TO-257AB
package instruction	CHIP CARRIER, R-CBCC-N3	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-MSFM-P3
Contacts	3	3	3
Reach Compliance Code	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99
Other features	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY
Shell connection	COLLECTOR	ISOLATED	ISOLATED
Maximum collector current (IC)	5 A	5 A	5 A
Collector-emitter maximum voltage	80 V	80 V	80 V
Configuration	DARLINGTON	DARLINGTON	DARLINGTON
Minimum DC current gain (hFE)	1000	1000	1000
JEDEC-95 code	TO-276AB	TO-257AB	TO-257AB
JESD-30 code	R-CBCC-N3	S-MSFM-P3	S-MSFM-P3
Number of components	1	1	1
Number of terminals	3	3	3
Maximum operating temperature	200 °C	200 °C	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	METAL	METAL
Package shape	RECTANGULAR	SQUARE	SQUARE
Package form	CHIP CARRIER	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	NO	NO
Terminal form	NO LEAD	PIN/PEG	PIN/PEG
Terminal location	BOTTOM	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	8 MHz	8 MHz	8 MHz

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