Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA07M4047M
RA07M4047MSA
07M4047
BLOCK DIAGRAM
2
3
RoHS Compliance ,
400-470MHz 7.0W 7.2V, 2 Stage Amp. For PORTABLE RADIO
DESCRIPTION
The RA07M4047MSA is a 7-watt RF MOSFET Amplifier
Module for 7.2-volt portable radios that operate in the 400- to
470-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (V
GG
=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 2.5V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 3V (typical) and 3.5V (maximum). At
V
GG
=3.5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but
may also be used for linear modulation by setting the drain
quiescent current with the gate voltage and controlling the output
power with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(I
DD
≅0
@ V
DD
=7.2V, V
GG
=0V)
• P
out
>7.0W @ V
DD
=7.2V, V
GG
=3.5V, P
in
=50mW
•
η
T
>40% @ P
out
=6.5W (V
GG
control), V
DD
=7.2V, P
in
=50mW
• Broadband Frequency Range: 400-470MHz
• Low-Power Control Current I
GG
=1mA (typ) at V
GG
=3.5V
• Module Size: 30 x 9.6 x 5.3 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
1
4
5
1
2
3
4
5
RF Input (P
in
)
Gate Voltage (V
GG
), Power Control
Drain Voltage (V
DD
), Battery
RF Output (P
out
)
RF Ground (Case)
RoHS COMPLIANCE
• RA07M4047MSA-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
RA07M4047MSA-101
SUPPLY FORM
Antistatic tray,
50 modules/tray
RA07M4047MSA
30 Jun 2010
1/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Silicon RF Power Semiconductors
RoHS COMPLIANCE
RA07M4047M
RA07M4047MSA
07M4047
RATING
9.2
4
70
10
-30 to +110
-40 to +110
UNIT
V
V
mW
W
°
C
°
C
MAXIMUM RATINGS
(T
case
=+25°C, unless otherwise specified)
SYMBOL PARAMETER
V
DD
V
GG
P
in
P
out
T
case(OP)
T
stg
Drain Voltage
Gate Voltage
Input Power
Output Power
Operation Case Temperature Range
Storage Temperature Range
f=400-470MHz,V
GG
<3.5V
Z
G
=Z
L
=50Ω
CONDITIONS
V
GG
<3.5V
V
DD
<7.2V, P
in
=0mW
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
SYMBOL PARAMETER
f
P
out
η
T
2f
o
3f
o
ρ
in
I
GG
—
—
Frequency Range
Output Power
Total Efficiency
2
nd
rd
CONDITIONS
V
DD
=7.2V,V
GG
=3.5V, P
in
=50mW
MIN
400
7.0
40
-
-
-
-
TYP
-
-
-
-
-
-
1
MAX
470
-
-
-25
-30
4:1
-
UNIT
MHz
W
%
dBc
dBc
—
mA
—
—
Harmonic
3 Harmonic
Input VSWR
Gate Current
Stability
Load VSWR Tolerance
P
out
=6.5W (V
GG
control),
V
DD
=7.2V,
P
in
=50mW
V
DD
=4.0-9.2V, P
in
=25-70mW, P
out
<8W (V
GG
control),
Load VSWR=8:1
V
DD
=9.2V, P
in
=50mW, P
out
=7W (V
GG
control),
Load VSWR=20:1
No parasitic oscillation
No degradation or destroy
All parameters, conditions, ratings, and limits are subject to change without notice.
RA07M4047MSA
30 Jun 2010
2/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Silicon RF Power Semiconductors
RoHS COMPLIANCE
RA07M4047M
RA07M4047MSA
07M4047
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY,
and INPUT VSWR versus FREQUENCY
10
100
P
out
9
90
8
80
V
DD
=7.2V
7
70
V
GG
=3.5V
6
Pin=50mW
60
ηt
5
50
4
40
3
30
ρin
2
20
1
10
0
0
390 400 410 420 430 440 450 460 470 480
FREQUENCY f(MHz)
TOTAL EFFICIENCY
ηT(%)
OUTPUT POWER P
out
(W)
INPUT VSWR(-)
2 ,3 HARMONICS(dBc)
2
nd
, 3
rd
HARMONICS versus FREQUENCY
-20
-25
-30
-35
-40
2
nd
-45
-50
-55
3
rd
-60
-65
-70
390 400 410 420 430 440 450
FREQUENCY f(MHz)
V
DD
=7.2V
V
GG
=3.5V
Pin=50mW
nd
rd
460 470 480
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
40
38
36
34
32
30
28
26
24
22
20
-10
OUTPUT POWER P
out
(dBm)
POWER GAIN(dB)
OUTPUT POWER P
out
(dBm)
POWER GAIN(dB)
f=400MHz
V
DD
=7.2V
V
GG
=3.5V
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
40
38
36
34
32
30
28
26
24
22
20
-10
DRAIN CURRENT I
DD
(A)
DRAIN CURRENT I
DD
(A)
f=435MHz
V
DD
=7.2V
V
GG
=3.5V
P
out
P
out
Gp
I
DD
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
20
Gp
I
DD
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
20
DRAIN CURRENT I
DD
(A)
-5
INPUT POWER P
IN
(dBm)
0
5
10
15
-5
INPUT POWER P
IN
(dBm)
0
5
10
15
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
40
38
36
34
32
30
28
26
24
22
20
-10
OUTPUT POWER P
out
(dBm)
POWER GAIN(dB)
Gp
P
out
I
DD
f=470MHz
V
DD
=7.2V
V
GG
=3.5V
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
20
-5
INPUT POWER P
IN
(dBm)
0
5
10
15
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
14
OUTPUT POWER P
out
(W)
DRAIN CURRENT I
DD
(A)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
3.5
OUTPUT POWER P
out
(W)
DRAIN CURRENT I
DD
(A)
14
12
10
8
6
4
2
0
3
4
DRAIN VOLTAGE V
DD
(V)
f=435MHz
P
IN
=50mW
V
GG
=3.5V
3.5
3.0
2.5
P
out
12
10
8
6
4
2
0
3
f=400MHz
P
IN
=50mW
V
GG
=3.5V
3.0
2.5
2.0
P
out
I
DD
I
DD
2.0
1.5
1.0
0.5
0.0
1.5
1.0
0.5
0.0
4
DRAIN VOLTAGE V
DD
(V)
5
6
7
8
9
10
5
6
7
8
9
10
RA07M4047MSA
30 Jun 2010
3/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Silicon RF Power Semiconductors
RoHS COMPLIANCE
RA07M4047M
RA07M4047MSA
07M4047
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
14
OUTPUT POWER P
out
(W)
3.5
DRAIN CURRENT I
DD
(A)
f=470MHz
P
IN
=50mW
V
GG
=3.5V
12
10
8
6
4
2
0
3
3.0
2.5
2.0
P
out
I
DD
1.5
1.0
0.5
0.0
4
DRAIN VOLTAGE V
DD
(V)
5
6
7
8
9
10
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
12
OUTPUT POWER P
out
(W)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
12
OUTPUT POWER P
out
(W)
DRAIN CURRENT I
DD
(A)
3.0
f=400MHz
P
IN
=50mW
V
DD
=7.2V
3.0
I
DD
I
DD
P
out
10
8
6
4
2
0
1.0
2.5
2.0
8
6
4
2
0
1.0
GATE VOLTAGE V
GG
(V)
2.0
1.5
1.0
0.5
0.0
2.0
3.0
4.0
P
out
1.5
1.0
0.5
0.0
GATE VOLTAGE V
GG
(V)
2.0
3.0
4.0
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
12
OUTPUT POWER P
out
(W)
3.0
2.5
I
DD
DRAIN CURRENT I
DD
(A)
f=470MHz
P
IN
=50mW
V
DD
=7.2V
10
8
2.0
P
out
6
4
2
0
1.0
GATE VOLTAGE V
GG
(V)
1.5
1.0
0.5
0.0
2.0
3.0
4.0
RA07M4047MSA
30 Jun 2010
4/9
DRAIN CURRENT I
DD
(A)
10
2.5
f=435MHz
P
IN
=50mW
V
DD
=7.2V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Silicon RF Power Semiconductors
RoHS COMPLIANCE
RA07M4047M
RA07M4047MSA
07M4047
OUTLINE DRAWING
(mm)
1 RF Input (P
in
)
2 Gate Voltage (V
GG
)
3 Drain Voltage (V
DD
)
4 RF Output (P
out
)
5 RF Ground (Case)
RA07M4047MSA
30 Jun 2010
5/9
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