<Silicon RF Power Modules >
RA13H3340M
RoHS Compliance ,330-400MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA13H3340M is a 13-watt RF MOSFET Amplifier Module for
12.5-volt mobile radios that operate in the 330- to 400-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate voltage
(V
GG
=0V), only a small leakage current flows into the drain and the
RF input signal attenuates up to 60 dB. The output power and drain
current increase as the gate voltage increases. With a gate
voltage around 4V (minimum), output power and drain current
increases substantially. The nominal output power becomes
available at 4.5V (typical) and 5V (maximum). At V
GG
=5V, the
typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may also be
used for linear modulation by setting the drain quiescent current with
the gate voltage and controlling the output power with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(I
DD
0
@ V
DD
=12.5V, V
GG
=0V)
• P
out
>13W,
T
>40% @ V
DD
=12.5V, V
GG
=5V, P
in
=50mW
• Broadband Frequency Range: 330-400MHz
• Low-Power Control Current I
GG
=1mA (typ) at V
GG
=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain current with
the gate voltage and controlling the output power with the input power
BLOCK DIAGRAM
2
3
1
4
5
1
2
3
4
5
RF Input (P
in
)
Gate Voltage (V
GG
), Power Control
Drain Voltage (V
DD
), Battery
RF Output (P
out
)
RF Ground (FIN)
PACKAGE CODE: H2S
RoHS COMPLIANCE
• RA13H3340M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and
the lead in electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
RA13H3340M-101
SUPPLY FORM
Antistatic tray,
10 modules/tray
Publication Date : Jul.2011
1
<Silicon RF Power Modules >
RA13H3340M
RoHS Compliance ,330-400MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
MAXIMUM RATINGS
(T
case
=+25°C, unless otherwise specified)
SYMBOL PARAMETER
V
DD
V
GG
P
in
P
out
T
case(OP)
T
stg
Drain Voltage
Gate Voltage
Input Power
f=330-400MHz,
Output Power
Z
G
=Z
L
=50
Operation Case Temperature Range
Storage Temperature Range
-30 to +110
-40 to +110
°C
°C
20
W
CONDITIONS
V
GG
<5V
V
DD
<12.5V, P
in
=0mW
RATING
17
6
100
UNIT
V
V
mW
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(T
case
=+25°C, Z
G
=Z
L
=50, unless otherwise specified)
SYMBOL PARAMETER
f
P
out
T
2f
o
in
I
GG
—
Frequency Range
Output Power
Total Efficiency
2
nd
CONDITIONS
MIN
330
13
TYP
-
-
-
-
-
1
MAX
400
-
-
-30
3:1
-
UNIT
MHz
W
%
dBc
—
mA
—
Harmonic
V
DD
=12.5V
V
GG
=5V
P
in
=50mW
40
-
-
-
Input VSWR
Gate Current
V
DD
=10.0-15.2V, P
in
=25-70mW,
Stability
P
out
<20W (V
GG
control), Load VSWR=3:1
V
DD
=15.2V, P
in
=50mW, P
out
=13W (V
GG
control),
No parasitic oscillation
—
Load VSWR Tolerance
Load VSWR=20:1
No degradation or destroy
—
All parameters, conditions, ratings, and limits are subject to change without notice.
Publication Date : Jul.2011
2
<Silicon RF Power Modules >
RA13H3340M
RoHS Compliance ,330-400MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY,
and INPUT VSWR versus FREQUENCY
30
OUTPUT POWER P
out
(W)
INPUT VSWR
in
(-)
2
nd
, 3 HARMONICS versus FREQUENCY
-20
HARMONICS (dBc)
rd
120
P
out
25
20
15
10
5
100
80
TOTAL EFFICIENCY
T
(%)
-30
-40
-50
-60
3
rd
V
DD
=12.5V
V
GG
=5V
P
in
=50mW
2
nd
T
V
DD
=12.5V
V
GG
=5V
P
in
=50mW
60
40
20
in
0
0
320 330 340 350 360 370 380 390 400 410
FREQUENCY f(MHz)
-70
320 330 340 350 360 370 380 390 400 410
FREQUENCY f(MHz)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
50
P
out
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
50
DRAIN CURRENT I
DD
(A)
P
out
5
OUTPUT POWER
P
out
(dBm)
POWER GAIN Gp(dB)
5
Gp
40
Gp
4
3
2
f=330MHz,
V
DD
=12.5V,
V
GG
=5V
40
30
20
10
0
-15
-10
4
3
I
DD
f=365MHz,
V
DD
=12.5V,
V
GG
=5V
30
20
10
0
-15 -10
-5
0
5
10
15
20
INPUT POWER P
in
(dBm)
I
DD
2
1
0
20
1
0
-5
0
5
10
15
INPUT POWER P
in
(dBm)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
50
P
out
5
4
Gp
40
30
20
10
0
-15
-10
-5
0
5
I
DD
f=400MHz,
V
DD
=12.5V,
V
GG
=5V
3
2
1
0
10
15
20
INPUT POWER P
in
(dBm)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
30
OUTPUT POWER P
out
(W)
DRAIN CURRENT I
DD
(A)
OUTPUT POWER
P
out
(dBm)
POWER GAIN Gp(dB)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
6
OUTPUT POWER P
out
(W)
DRAIN CURRENT I
DD
(A)
30
25
20
15
10
5
0
2
4
6
8
10
12
DRAIN VOLTAGE V
DD
(V)
14
16
I
DD
f=365MHz,
V
GG
=5V,
P
in
=50mW
P
out
6
DRAIN CURRENT I
DD
(A)
25
20
15
10
5
0
2
f=330MHz,
V
GG
=5V,
P
in
=50mW
P
out
5
4
5
4
3
2
1
0
I
DD
3
2
1
0
4
6
8
10
12
DRAIN VOLTAGE V
DD
(V)
14
16
Publication Date : Jul.2011
3
DRAIN CURRENT
I
DD
(A)
OUTPUT POWER
P
out
(dBm)
POWER GAIN Gp(dB)
<Silicon RF Power Modules >
RA13H3340M
RoHS Compliance ,330-400MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50, unless otherwise specified)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
30
OUTPUT POWER P
out
(W)
6
DRAIN CURRENT I
DD
(A)
f=400MHz,
V
GG
=5V,
P
in
=50mW
P
out
25
20
15
10
5
0
2
5
4
I
DD
3
2
1
0
4
6
8
10
12
DRAIN VOLTAGE V
DD
(V)
14
16
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
30
OUTPUT POWER P
out
(W)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
6
DRAIN CURRENT I
DD
(A)
30
OUTPUT POWER P
out
(W)
6
DRAIN CURRENT I
DD
(A)
f=365MHz,
V
DD
=12.5V,
P
in
=50mW
25
20
15
10
5
0
2.5
f=330MHz,
V
DD
=12.5V,
P
in
=50mW
5
P
out
25
20
15
10
5
0
2.5
5
P
out
4
I
DD
4
I
DD
3
2
1
0
3
2
1
0
3
3.5
4
4.5
GATE VOLTAGE V
GG
(V)
5
5.5
3
3.5
4
4.5
GATE VOLTAGE V
GG
(V)
5
5.5
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
30
OUTPUT POWER P
out
(W)
6
DRAIN CURRENT I
DD
(A)
f=400MHz,
V
DD
=12.5V,
P
in
=50mW
25
20
15
10
5
0
2.5
5
P
out
4
3
2
1
0
I
DD
3
3.5
4
4.5
GATE VOLTAGE V
GG
(V)
5
5.5
Publication Date : Jul.2011
4
<Silicon RF Power Modules >
RA13H3340M
RoHS Compliance ,330-400MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
OUTLINE DRAWING
(mm)
66.0 ±0.5
3.0 ±0.3
7.25 ±0.8
51.5 ±0.5
60.0 ±0.5
2-R2 ±0.5
21.0 ±0.5
9.5 ±0.5
5
1
2
3
4
14.0 ±1
2.0 ±0.5
Ø0.45 ±0.15
12.0 ±1
16.5 ±1
43.5 ±1
55.5 ±1
3.1 +0.6/-0.4
0.09 ±0.02
7.5 ±0.5
4.0 ±0.3
2.3 ±0.3
(50.4)
(9.88)
17.0 ±0.5
1
2
3
4
5
RF Input (P
in
)
Gate Voltage (V
GG
)
Drain Voltage (V
DD
)
RF Output (P
out
)
RF Ground (Case)
Publication Date : Jul.2011
5
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