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UF2D

Description
2 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AA
Categorysemiconductor    Discrete semiconductor   
File Size174KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
Download Datasheet Parametric Compare View All

UF2D Overview

2 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AA

UF2D Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionPlastic, SMB, 2 PIN
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formC BEND
terminal coatingNOT SPECIFIED
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Diode component materialssilicon
Diode typerectifier diode
applicationEFFICIENCY
Phase1
Maximum reverse recovery time0.0500 us
Maximum repetitive peak reverse voltage200 V
Maximum average forward current2 A
Maximum non-repetitive peak forward current50 A
UF2A-UF2M
Surface Mount Rectifiers
VOLTAGE RANGE: 50 --- 1000 V
CURRENT:
2.0
A
DO-214AA(SMB)
Features
Low cost
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
2.0± 0.15
4.7± 0.25
5.4± 0.2
Mechanical Data
Case:JEDEC DO-214AA,molded plastic
Polarity: Color band denotes cathode
Weight: 0.003 ounces,0.093 grams
Mounting position: Any
2.3± 0.15
1.3± 0.2
0.203MAX
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
 
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
UF2A
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
@T
L
=90
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum reverse current
at rated DC blocking voltage
Typical junction capacitance
Typical thermal resistance
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Measured at 1.0MHZ and applied rev erse v oltage of 4.0V DC.
UF2B
100
70
100
UF2D
200
140
200
UF2G
400
280
400
UF2J
600
420
600
UF2K
800
560
800
UF2M UNITS
1000
700
1000
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
2
.0
I
FSM
@T
J
=125
3.6± 0.3
0.2± 0.05
50
1.0
1.4
5.0
100
50
15
15
- 55 ---- + 150
- 55 ---- + 150
75
12
1.7
A
V
A
ns
pF
/W
Maximum instantaneous forw ard voltage at2.0 A
@T
A
=25
@T
A
=100
(Note2)
(Note3)
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
Maximum thermal resistance (NOTE1)
Operating junction temperature range
http://www.luguang.cn
mail:lge@luguang.cn

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UF2D UF2A UF2G UF2K UF2B UF2J
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