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US2A

Description
2 A, 50 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    High efficiency rectifier diode   
File Size162KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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US2A Overview

2 A, 50 V, SILICON, RECTIFIER DIODE

US2A Parametric

Parameter NameAttribute value
Case StyleSMB
Maximum average forward rectified curre2
Maximum recurrent peak reverse voltage50
Peak forward surge curre50
Maximum instantaneous forward voltage1.0
Maximum reverse curre10
TRR(nS)50
classDiodes
US2A-US2M
Surface Mount Rectifiers
REVERSE VOLTAGE: 50 - 1000 V
FORWARD CURRENT: 2.0 A
Features
vvvv
Plastic package has
underwriters laboratories
vflam
mability
classification
94V-0
For surface mount applications
Glass passivated chip junctions
Low profile package
Easy pick and place
Ultrafast recovery times for high efficiency
Low forward voltage,low power loss
Built-in strain relief,ideal for autom ated placem ent
111
High temperature soldering:
250
o
C/10 seconds on terminals
2.3± 0.15
DO-214AA(SMB)
4.7± 0.25
2.0± 0.15
5.4± 0.2
Case:JEDEC DO-214AA,m olded plastic body over
passivated chip
Polarity: Color band denotes cathode end
Weight: 0.003 ounces, 0.093 gram
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C am bient tem perature unless otherwise specified
US2A
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
@T
L
=90
O
C
Peak forw ard surge current 8.3ms single half-
sine-w ave superimposed on rated load(JEDEC
Method)
Maximum instantaneous forw ard voltage at 2A
Maximum DC reverse current
at rated DC blockjing voltage
@T
A
=25
o
C
@T
A
=125
o
C
US2B
100
70
100
0.203MAX
Mechanical Data
1.3± 0.2
3.6± 0.3
0.2± 0.05
US2D
200
140
200
US2G
400
280
400
2.0
50
US2J
600
420
600
US2K
800
560
800
US2M
1000
700
1000
UNITS
V
V
V
A
A
V
RRM
V
RWS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
R
JA
JL
50
35
50
1.0
10
350
50
50
40
15
-55--------+150
-55--------+150
1.7
V
Maximum reverse recovery time at I
F
=0.5A
I
R
=1.0A I
rr
=0.25A
Typical junction capacitance at 4.0V,1MH
Z
Maximum thermal resistance (NOTE1)
Operating temperature range
Storage temperature range
75
30
o
ns
pF
C/W
o
o
T
J
T
STG
C
C
NOTE: 1.P.C.B.mounted on 0.2X0.2"(5.0X5.0mm)copper pad area
http://www.luguang.cn
mail:lge@luguang.cn

US2A Related Products

US2A US2B US2D US2J US2K US2M
Description 2 A, 50 V, SILICON, RECTIFIER DIODE 2 A, 100 V, SILICON, RECTIFIER DIODE 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 1000 V, SILICON, RECTIFIER DIODE
Parts packaging code - SMB SMB SMB SMB SMB
Manufacturer packaging code - SMB SMB SMB SMB SMB
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