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DB157

Description
1.5 A, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size269KB,3 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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DB157 Overview

1.5 A, SILICON, BRIDGE RECTIFIER DIODE

MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
DB151
THRU
DB157
1.5 Amp Single Phase
Bridge Rectifier
50 to 1000 Volts
DB-1
Notch
Features
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
RoHS Compliant. See ordering information)
4- pin DIP Package and
Low Profile Package
UL Recognized File # E165989
High Surge Current Capability
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Maximum Ratings
Operating Temperature: -55 C to +150 C
Storage Temperature: -55 C to +150 C
Thermal Resistance : Rthja:40
C/W;
RthJL:1
5
C/W
MCC
Part
Number
DB151
DB152
DB153
DB154
DB155
DB156
DB157
Device
Marking
DB151
DB152
DB153
DB154
DB155
DB156
DB157
Maximum
Recurrent
Peak Reverse
Voltage
50V
100V
200V
400V
600V
800V
1000V
Maximum
RMS
Voltage
35V
70V
140V
280V
420V
560V
700V
Maximum
DC
Blocking
Voltage
50V
100V
200V
400V
600V
800V
1000V
B
-
~
A
+
C
~
E
F
G
D
H
Electrical Characteristics @ 25 C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Typical Junction
Capacitance
I
F(AV)
I
FSM
1.5 A
50A
T
A
= 40 C
8.3ms, half sine
INCHES
DIM
A
B
C
D
E
F
G
H
MIN
.316
.245
.300
.236
.102
.060
.016
.195
.022
.205
.41
5.00
MAX
.335
.255
.350
.299
.130
MIN
8.05
6.20
7.60
6.01
2.60
1.50
.56
5.20
DIMENSIONS
MM
MAX
8.51
6.50
8.90
7.60
3.30
NOTE
V
F
1.1V
I
FM
= 1.5A
(Note 2)
T
A
= 25 C
T
A
= 25 C
T
A
= 125 C
Measured at
1.0MHz, V
R
=4.0V
I
R
C
J
10 A
500uA
25pF
Typ
Typ
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.
2.Pulse
Test: Pulse Width 300 sec, Duty Cycle 1%
Revision:
A
www.mccsemi.com
1 of 3
2011/01/01

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