Rev 1.2
BSL307SP
OptiMOS
-P Small-Signal-Transistor
Feature
•
P-Channel
•
Enhancement mode
•
Logic Level
•
150°C operating temperature
•
Avalanche rated
•
dv/dt rated
Product Summary
V
DS
R
DS(on)
I
D
-30
43
-5.5
PG-TSOP-6-1
V
mΩ
A
4
5
6
3
2
1
Type
BSL307SP
Package
PG-TSOP-6-1
Tape and reel
Marking
Gate
pin 3
Drain
pin 1,2,
5,6
Source
pin 4
L6327: 3000pcs/r.
sPC
Maximum Ratings,at
T
j
= 25 °C, unless otherwise specified
Parameter
Continuous drain current
T
A
=25°C
T
A
=70°C
Symbol
I
D
Value
-5.5
-4.4
Unit
A
Pulsed drain current
T
A
=25°C
I
D puls
E
AS
dv/dt
V
GS
P
tot
T
j
,
T
stg
-22
44
-6
±20
2
-55... +150
55/150/56
Avalanche energy, single pulse
I
D
=-5.5 A ,
V
DD
=-25V,
R
GS
=25Ω
mJ
kV/µs
V
W
°C
Reverse diode dv/dt
I
S
=-5.5A,
V
DS
=24V, di/dt=200A/µs,
T
jmax
=150°C
Gate source voltage
Power dissipation
T
A
=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Page 1
2007-02-23
Rev 1.2
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - soldering point
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
BSL307SP
Symbol
min.
R
thJS
R
thJA
-
-
-
Values
typ.
-
-
-
max.
50
230
62.5
Unit
K/W
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Static Characteristics
Drain-source breakdown voltage
V
GS
=0,
I
D
=-250µA
Symbol
min.
V
(BR)DSS
V
GS(th)
I
DSS
-
-
I
GSS
R
DS(on)
R
DS(on)
-
-
-
-30
-1
Values
typ.
-
-1.5
max.
-
-2
Unit
V
Gate threshold voltage,
V
GS
=
V
DS
I
D
=-40µA
Zero gate voltage drain current
V
DS
=-30V,
V
GS
=0,
T
j
=25°C
V
DS
=-30V,
V
GS
=0,
T
j
=150°C
µA
-0.1
-10
-10
52
31
-1
-100
-100
74
43
nA
mΩ
Gate-source leakage current
V
GS
=-20V,
V
DS
=0
Drain-source on-state resistance
V
GS
=-4.5V,
I
D
=-4.2A
Drain-source on-state resistance
V
GS
=-10V,
I
D
=-5.5A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air; t
≤
5 sec.
Page 2
2007-02-23
Rev 1.2
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=-15V,
V
GS
=-10V,
I
D
=-1A,
R
G
=6Ω
çV
DS
ç≥2*çI
D
ç*R
DS(on)max
I
D
=-4.4A
V
GS
=0,
V
DS
=-25V,
f=1MHz
BSL307SP
Symbol
Conditions
min.
4.7
-
-
-
-
-
-
-
Values
typ.
9.4
805
234
195
7.3
8.4
36.4
29
max.
-
-
-
-
11
12.6
55
44
Unit
S
pF
ns
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inverse diode direct current,
pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
V
SD
t
rr
Q
rr
V
GS
=0, |I
F
| = |I
D
|
V
R
=-15V, |I
F
|
=
|l
D
|,
di
F
/dt=100A/µs
Q
gs
Q
gd
Q
g
V
DD
=-24V,
I
D
=-5.5A
-
-
-
-
-2
-8.2
-23.4
-2.8
-2.5
-12.3
-29
-
nC
V
DD
=-24V,
I
D
=-5.5A,
V
GS
=0 to -10V
V
(plateau)
V
DD
=-24V,
I
D
=-5.5A
V
I
S
I
SM
T
A
=25°C
-
-
-
-
-
-
-
-0.88
16.6
6.2
-5.5
-22
-1.3
21
7.8
A
V
ns
nC
Page 3
2007-02-23
Rev 1.2
1 Power dissipation
P
tot
=
f
(T
A
)
2.2
BSL307SP
BSL307SP
2 Drain current
I
D
=
f
(T
A
)
parameter: |V
GS
|≥ 10 V
-6
BSL307SP
W
1.8
1.6
A
-5
-4.5
-4
P
tot
I
D
-3.5
-3
-2.5
-2
-1.5
-1
-0.5
20
40
60
80
100
120
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
°C
160
0
0
20
40
60
80
100
120
°C
160
T
A
T
A
3 Safe operating area
I
D
=
f
(
V
DS
)
parameter :
D
= 0 ,
T
A
= 25 °C
-10
2
BSL307SP
4 Transient thermal impedance
Z
thJS
=
f
(t
p
)
parameter :
D
=
t
p
/T
10
2
BSL307SP
A
=
V
D
(o
DS
n)
/
I
D
S
K/W
t
p = 90.0µs
100 µs
10
1
-10
1
R
Z
thJS
1 ms
10
0
I
D
-10
0
10 ms
10
-1
D = 0.50
0.20
10
-2
0.10
0.05
0.02
-10
-1
DC
10
-3
single pulse
0.01
-10
-2 -1
-10
-10
0
-10
1
V
-10
2
10
-4 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
V
DS
Page 4
t
p
2007-02-23
Rev 1.2
5 Typ. output characteristic
I
D
=
f
(V
DS
);
T
j
=25°C
parameter:
t
p
= 80 µs
50
Vgs = -6V
A
Vgs = -5.5V
Vgs = -5V
BSL307SP
6 Typ. drain-source on resistance
R
DS(on)
=
f
(I
D
)
parameter:
V
GS
0.1
Ω
0.08
Vgs = -3.5V
Vgs = -4V
Vgs = -4.5V
R
DS(on)
Vgs = -7V
Vgs = -8V
Vgs = -10V
0.07
0.06
0.05
-
I
D
30
Vgs = -4.5V
20
Vgs = -4V
0.04
0.03
10
Vgs = -3.5V
0.02
0.01
Vgs= - 3V
Vgs = - 3.5V
Vgs = - 4.5V
Vgs= - 6V
Vgs = - 10V
5
10
15
20
25
30
35
40
A
Vgs = -3V
0
0
1
2
3
4
5
6
7
8
V
10
0
0
50
-
V
DS
-
I
D
7 Typ. transfer characteristics
I
D
=
f
(
V
GS
); |V
DS
|≥ 2 x |I
D
| x
R
DS(on)max
parameter:
t
p
= 80 µs
20
8 Typ. forward transconductance
g
fs
= f(I
D
);
T
j
=25°C
parameter:
t
p = 80 µs
15
A
S
-
I
D
12
g
fs
V
10
7.5
8
5
4
2.5
0
0
1
2
3
5
0
0
5
10
A
20
-
V
GS
-
I
D
Page 5
2007-02-23
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