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R2J25953

Description
H-Bridge Control High Speed Power Switching with Built-in Driver IC and Power MOS FET
File Size137KB,17 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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R2J25953 Overview

H-Bridge Control High Speed Power Switching with Built-in Driver IC and Power MOS FET

Preliminary
Datasheet
R2J25953
H-Bridge Control High Speed Power Switching
with Built-in Driver IC and Power MOS FET
Description
The R2J25953 multi-chip module incorporates high-side Pch MOS FET, low-side Nch MOS FET, and Bi-CMOS driver
in a single HSOP-36 package.
R07DS0044EJ0300
Rev.3.00
Sep 01, 2010
Features
For Automotive application
Built-in low on state resistance MOS FET.
(Pch: 16 m Max., Nch: 11 m Max.)
Pch MOS FET is adopted on the high-side, and the charge pump noise was lost.
Built-in protection circuit of Thermal shut-down (TSD), Low Voltage Inhit (LVI), Overvoltage Detection (OVD)
and Overcurrent Detection.
Built-in diagnostic function.
Built-in cross-conduction protection.
Small Surface mounting package: HSOP-36
Block Diagram
Reverce battery
protection device
VBAT
Vz
Cp
M
VB1
VBS1
VCC
VBS2
VB2
Pch MOS
Pch MOS
Dr.
LVI, OVD
Overcurrent detection
Dr.
OUT1
TSD
OUT2
Dr.
Nch MOS
Logic
Dr.
Nch MOS
PGND1
PWM
INA
INB
DIAG
LGND
V30
C1
PGND2
Pull-up in the Microcomputer
R1 power supply
Microcomputer
R07DS0044EJ0300 Rev.3.00
Sep 01, 2010
Page 1 of 16

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Description H-Bridge Control High Speed Power Switching with Built-in Driver IC and Power MOS FET H-Bridge Control High Speed Power Switching with Built-in Driver IC and Power MOS FET
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