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IRHLF6930Z4

Description
Power Field-Effect Transistor, 1.6A I(D), 60V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, HERMETIC SEALED PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size147KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

IRHLF6930Z4 Overview

Power Field-Effect Transistor, 1.6A I(D), 60V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, HERMETIC SEALED PACKAGE-3

IRHLF6930Z4 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInfineon
package instructionHERMETIC SEALED PACKAGE-3
Reach Compliance Codecompliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)10 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)1.6 A
Maximum drain-source on-resistance1.2 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-39
JESD-30 codeO-MBCY-W3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Maximum pulsed drain current (IDM)6.4 A
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
PD - 94685
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
THRU-HOLE (TO-39)
Product Summary
Part Number Radiation Level R
DS(on)
I
D
IRHLF6970Z4 100K Rads (Si) 1.2Ω
-1.6A
IRHLF6930Z4
300K Rads (Si)
1.2Ω
-1.6A
IRHLF6970Z4
60V, P-CHANNEL
TECHNOLOGY
International Rectifier’s R6
TM
Logic Level Power
Mosfets provide simple solution to interfacing CMOS
and TTL control circuits to power devices in space
and other radiation environments. The threshold
voltage remains within accptable operating limits
over the full operating temperature and post radia-
tion. This is achieved while maintaining single event
gate rupture and single event burnout immunity.
These devices are used in applications such as cur-
rent boost low signal source in PWM, voltage com-
parator and operational amplifiers.
T0-39
Features:
n
n
n
n
n
n
n
n
n
5V CMOS and TTL Compatible
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
Complimentary N-Channel Available -
IRHLF670Z4
Absolute Maximum Ratings
Parameter
ID @ VGS = -4.5V, TC = 25°C Continuous Drain Current
ID @ VGS = -4.5V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
-1.6
-1.0
-6.4
5.0
0.04
±10
10
-1.6
0.5
-4.0
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (0.063in/1.6mm from case for 10s)
0.98 ( Typical )
g
www.irf.com
1
07/07/03

IRHLF6930Z4 Related Products

IRHLF6930Z4 IRHLF6970Z4 IRHLF6930Z4PBF
Description Power Field-Effect Transistor, 1.6A I(D), 60V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, HERMETIC SEALED PACKAGE-3 Power Field-Effect Transistor, 1.6A I(D), 60V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, HERMETIC SEALED PACKAGE-3 Power Field-Effect Transistor, 1.6A I(D), 60V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, HERMETIC SEALED PACKAGE-3
Is it Rohs certified? incompatible conform to conform to
Maker Infineon Infineon Infineon
package instruction HERMETIC SEALED PACKAGE-3 HERMETIC SEALED PACKAGE-3 CYLINDRICAL, O-MBCY-W3
Reach Compliance Code compliant compliant compliant
Avalanche Energy Efficiency Rating (Eas) 10 mJ 10 mJ 10 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 60 V 60 V 60 V
Maximum drain current (ID) 1.6 A 1.6 A 1.6 A
Maximum drain-source on-resistance 1.2 Ω 1.2 Ω 1.2 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-39 TO-39 TO-39
JESD-30 code O-MBCY-W3 O-MBCY-W3 O-MBCY-W3
Number of components 1 1 1
Number of terminals 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material METAL METAL METAL
Package shape ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) NOT SPECIFIED 260 NOT SPECIFIED
Polarity/channel type P-CHANNEL P-CHANNEL P-CHANNEL
Maximum pulsed drain current (IDM) 6.4 A 6.4 A 6.4 A
surface mount NO NO NO
Terminal form WIRE WIRE WIRE
Terminal location BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED 40 NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
ECCN code EAR99 EAR99 -
Certification status Not Qualified Not Qualified -
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