EEWORLDEEWORLDEEWORLD

Part Number

Search

IRFMG50UPBF

Description
Power Field-Effect Transistor, 5.6A I(D), 1000V, 2.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,
CategoryDiscrete semiconductor    The transistor   
File Size241KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

IRFMG50UPBF Overview

Power Field-Effect Transistor, 5.6A I(D), 1000V, 2.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,

IRFMG50UPBF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionFLANGE MOUNT, R-MSFM-P3
Reach Compliance Codecompliant
Avalanche Energy Efficiency Rating (Eas)860 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage1000 V
Maximum drain current (ID)5.6 A
Maximum drain-source on-resistance2.25 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-254AA
JESD-30 codeR-MSFM-P3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)22 A
surface mountNO
Terminal formPIN/PEG
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON

IRFMG50UPBF Related Products

IRFMG50UPBF IRFMG50U
Description Power Field-Effect Transistor, 5.6A I(D), 1000V, 2.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, Power Field-Effect Transistor, 5.6A I(D), 1000V, 2.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,
Is it Rohs certified? conform to incompatible
Maker Infineon Infineon
Reach Compliance Code compliant not_compliant
Avalanche Energy Efficiency Rating (Eas) 860 mJ 860 mJ
Shell connection ISOLATED ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 1000 V 1000 V
Maximum drain current (ID) 5.6 A 5.6 A
Maximum drain-source on-resistance 2.25 Ω 2.25 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-254AA TO-254AA
JESD-30 code R-MSFM-P3 R-MSFM-P3
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material METAL METAL
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED 260
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 22 A 22 A
surface mount NO NO
Terminal form PIN/PEG PIN/PEG
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED 40
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
【Transfer】Signal rise time
[p=26, 2, left][color=#333333][font=Arial][size=14px]1. Pay attention to the signal rise time [/size][/font][/color][/p][p=26, 2, left][color=#333333][font=Arial][size=14px] The rise time of the signa...
wstt Test/Measurement
Common problems and solutions for the "remote control" of anti-theft alarms
Nowadays, there are more and more cars, motorcycles, electric vehicles, and home anti-theft systems equipped with remote controls. While remote controls bring convenience to people, they sometimes hav...
aone2008 Industrial Control Electronics
G2553 Simulation IIC problem, experts please
//Generate IIC start signal void IIC_Start(void) { SDA_OUT(); //sda line output IIC_SDA_1; IIC_SCL_1; delay_us(5); IIC_SDA_0;//START:when CLK is high,DATA change form high to low delay_us(5); IIC_SCL_...
两个人的烟火 Microcontroller MCU
Help: The address is inconsistent after ADS is compiled
Today, when I was debugging AXD at work, I had never paid attention to the code compiled by AXD. Today, I carefully looked at it and found a problem. I wrote ldr r1,#0x33ffff1c in the code, but I saw ...
hezhengli Embedded System
Solve the problem that DNW eboot cannot connect to USB when downloading bin files
Please help me solve the problem that DNW eboot cannot connect to USB when downloading bin files!...
deifwleili Embedded System
Is the DS-5 debug error because it is not cracked?
The debug error interface is as followsThe pop-up window promptsI searched for a ds-5 crack file. It seems that there is no crack? How do you solve it? Is there a better crack package? Or are you stil...
liyang53719 FPGA/CPLD

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1296  890  2109  2424  421  27  18  43  49  9 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号