IS63WV1024LL
128K x 8 HIGH-SPEED CMOS STATIC RAM
ISSI
FEBRUARY 2004
®
FEATURES
• High-speed access time: 20ns
• High-performance, low-power CMOS process
• Multiple center power and ground pins for
greater noise immunity
• Easy memory expansion with
CE
and
OE
options
•
CE
power-down
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Single 2.5V-3.6V V
DD
power supply
• Packages available:
– 32-pin TSOP (Type II)
– 32-pin sTSOP (Type I)
– 36-Ball miniBGA (6mm x 8mm)
– 32-pin SOJ (300-mil)
DESCRIPTION
The
ISSI
IS63WV1024LL is a very high-speed, low
power, 131,072-word by 8-bit CMOS static RAM. The
IS63WV1024LL is fabricated using
ISSI
's
high-performance CMOS technology. This highly reliable
process coupled with innovative circuit design
techniques, yields higher performance and low power
consumption devices.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down to 250 µW (typical) with CMOS input
levels.
The IS63WV1024LL operates from a single V
DD
power
supply. The IS63WV1024LL is available in 32-pin TSOP
(Type II), 32-pin sTSOP (Type I), 36-Ball miniBGA (6mm
x 8mm), and 32-pin SOJ (300-mil) packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A16
DECODER
128K X 8
MEMORY ARRAY
VDD
GND
I/O
DATA
CIRCUIT
I/O0-I/O7
COLUMN I/O
CE
OE
WE
CONTROL
CIRCUIT
Copyright © 2004 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice.
ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
02/02/04
1
IS63WV1024LL
TRUTH TABLE
Mode
Not Selected
(Power-down)
Output Disabled
Read
Write
WE
X
H
H
L
CE
H
L
L
L
OE
X
H
L
X
I/O Operation
High-Z
High-Z
D
OUT
D
IN
V
DD
Current
I
SB
1
, I
SB
2
I
CC
1
, I
CC
2
I
CC
1
, I
CC
2
I
CC
1
, I
CC
2
ISSI
®
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
T
STG
P
T
V
DD
Parameter
Terminal Voltage with Respect to GND
Storage Temperature
Power Dissipation
V
DD
Related to GND
Value
–0.5 to V
DD
+0.5
–65 to +150
1.5
-0.2 to +3.9
Unit
V
°C
W
V
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
OPERATING RANGE (V
DD
)
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
–40°C to +85°C
IS63WV1024LL
2.5V-3.6V
2.5V-3.6V
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
02/02/04
3
IS63WV1024LL
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
V
OH
V
OL
V
IH
V
IL
I
LI
I
LO
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
(1)
Input Leakage
Output Leakage
GND
≤
V
IN
≤
V
DD
GND
≤
V
OUT
≤
V
DD
, Outputs Disabled
Test Conditions
V
DD
= Min., I
OH
= –1.0 mA
V
DD
= Min., I
OL
= 1.0 mA
Min.
2.2
—
2.2
–0.3
–1
–1
ISSI
Max.
—
0.4
V
DD
+ 0.3
0.6
1
1
V
V
V
V
µA
µA
®
Unit
Notes:
1. V
IL
(min.) = –2.0V for pulse width less than 10 ns.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
Symbol Parameter
I
CC
V
DD
Dynamic Operating
Supply Current
Operating Supply
Current
TTL Standby Current
(TTL Inputs)
CMOS Standby
Current (CMOS Inputs)
Test Conditions
V
DD
= Max.,
I
OUT
= 0 mA, f = f
MAX
V
DD
= Max.,
Iout = 0mA, f = 0
V
DD
= Max.,
V
IN
= V
IH
or V
IL
CE
≥
V
IH
, f = 0
V
DD
= Max.,
CE
≥
V
DD
– 0.2V,
V
IN
≥
V
DD
– 0.2V, or
V
IN
≤
0.2V, f = 0
Options
COM
.
IND
.
-20 ns
Min. Max.
—
—
—
—
—
—
—
—
—
—
25
30
15
5
5
2
3
20
20
4
Unit
mA
typ.
(2)
I
CC
1
I
SB
1
COM
.
IND
.
COM
.
IND
.
mA
mA
I
SB
2
COM
.
IND
.
uA
typ.
(2)
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at V
DD
=2.5V, T
A
=25
o
C. Not 100% tested.
CAPACITANCE
(1)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Input/Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
6
8
Unit
pF
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
02/02/04
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