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MT9HVF12872RHY-800XX

Description
DDR DRAM Module, 128MX72, CMOS, LEAD FREE, SORDIMM-200
Categorystorage    storage   
File Size565KB,22 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
Download Datasheet Parametric View All

MT9HVF12872RHY-800XX Overview

DDR DRAM Module, 128MX72, CMOS, LEAD FREE, SORDIMM-200

MT9HVF12872RHY-800XX Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicron Technology
Parts packaging codeMODULE
package instructionDIMM,
Contacts200
Reach Compliance Codecompliant
ECCN codeEAR99
access modeSINGLE BANK PAGE BURST
Other featuresAUTO/SELF REFRESH
JESD-30 codeR-XDMA-N200
JESD-609 codee4
memory density9663676416 bit
Memory IC TypeDDR DRAM MODULE
memory width72
Number of functions1
Number of ports1
Number of terminals200
word count134217728 words
character code128000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize128MX72
Package body materialUNSPECIFIED
encapsulated codeDIMM
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
self refreshYES
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceGold (Au)
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperature30
512MB, 1GB (x72, ECC, SR): 200-Pin DDR2 SDRAM VLP SORDIMM
Features
DDR2 SDRAM VLP SORDIMM
MT9HVF6472RH – 512MB
MT9HVF12872RH – 1GB
For component data sheets, refer to Micron’s Web site:
www.micron.com
Features
• 200-pin, very low-profile (ATCA compatible), small-
outline registered dual in-line memory module (VLP
SORDIMM)
• Fast data transfer rates: PC2-3200, PC2-4200,
PC2-5300, or PC2-6400
• 512MB (64 Meg x 72), 1GB (128 Meg x 72)
• Supports ECC error detection and correction
• Vdd = Vddq = +1.8V
• Vddspd = +3.0V to +3.6V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Multiple internal device banks for concurrent
operation
• Programmable CAS# latency (CL)
• Posted CAS additive latency (AL)
• WRITE latency = READ latency - 1
t
CK
• Programmable burst lengths: 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination (ODT)
• Serial presence-detect (SPD) with EEPROM
• PLL to reduce system clock line loading
• Gold edge contacts
• Single rank
• I
2
C temperature sensor
Figure 1:
200-Pin VLP SORDIMM
(ATCA Compatible)
PCB height: 17.9mm (0.70in)
Options
• Operating temperature
Commercial (0°C
T
A
+70°C)
Industrial (–40°C
T
A
+85°C)
• Package
200-pin DIMM (lead-free)
• Frequency/CAS latency
2
2.5ns @ CL = 5 (DDR2-800)
2.5ns @ CL = 6 (DDR2-800)
3.0ns @ CL = 5 (DDR2-667)
3.75ns @ CL = 4 (DDR2-533)
5.0ns @ CL = 3 (DDR2-400)
3
• PCB height
17.9mm (0.70in)
1
Marking
None
I
Y
-80E
-800
-667
-53E
-40E
Notes: 1. Contact Micron for industrial temperature
module offerings.
2. CL = CAS (READ) latency; registered mode
will add one clock cycle to CL.
3. Not recommended for new designs.
Table 1:
Speed
Grade
-80E
-800
-667
-53E
-40E
Key Timing Parameters
Industry
Nomenclature
PC2-6400
PC2-6400
PC2-5300
PC2-4200
PC2-3200
Data Rate (MT/s)
CL = 6
800
CL = 5
800
667
667
CL = 4
533
533
533
533
400
CL = 3
400
400
400
t
RCD
t
RP
t
RC
(ns)
12.5
15
15
15
15
(ns)
12.5
15
15
15
15
(ns)
55
55
55
55
55
PDF: 09005aef82882ca3/Source: 09005aef82882c52
HVF9C64_128x72RH.fm - Rev. C 1/09 EN
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2007 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
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