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Datasheet> All Categories > Discrete semiconductor> The transistor> IXYX120N120C3
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IXYX120N120C3

Description
Insulated Gate Bipolar Transistor, 220A I(C), 1200V V(BR)CES, N-Channel,
CategoryDiscrete semiconductor    The transistor   
File Size215KB，6 Pages
ManufacturerIXYS
Environmental Compliance
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IXYX120N120C3 Overview

Insulated Gate Bipolar Transistor, 220A I(C), 1200V V(BR)CES, N-Channel,

IXYX120N120C3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerIXYS
Reach Compliance Codecompliant
Samacsys DescriptionIGBT N-Ch 1200V 220A XPT PLUS247 IXYS IXYX120N120C3, IGBT Transistor, 240 A 1200 V, 50kHz, 3-Pin PLUS247
Shell connectionCOLLECTOR
Maximum collector current (IC)240 A
Collector-emitter maximum voltage1200 V
ConfigurationSINGLE
Gate emitter threshold voltage maximum5 V
Gate-emitter maximum voltage20 V
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)1500 W
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)346 ns
Nominal on time (ton)105 ns

IXYX120N120C3 Preview

1200V XPT
TM
IGBTs
GenX3
TM
High-Speed IGBTs
for 20-50 kHz Switching
IXYK120N120C3
IXYX120N120C3
V
CES
=
I
C110
=
V
CE(sat)

t
fi(typ)
=
TO-264 (IXYK)
1200V
120A
3.20V
96ns
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
LRMS
I
C110
I
CM
I
A
E
AS
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
F
C
Weight
Test Conditions
T
J
= 25°C to 175°C
T
J
= 25°C to 175°C, R
GE
= 1M
Continuous
Transient
T
C
= 25°C (Chip Capability)
Terminal Current Limit
T
C
= 110°C
T
C
= 25°C, 1ms
T
C
= 25°C
T
C
= 25°C
V
GE
= 15V, T
VJ
= 150°C, R
G
= 1
Clamped Inductive Load
T
C
= 25°C
Maximum Ratings
1200
1200
±20
±30
240
160
120
700
60
2
I
CM
= 240
V
CE
V
CES
1500
-55 ... +175
175
-55 ... +175
V
V
V
V
A
A
A
A
A
J
A
W
°C
°C
°C
°C
°C
Nm/lb.in
N/lb
g
g
G
C
E
Tab
PLUS247 (IXYX)
G
G
C
E
Tab
G = Gate
C = Collector
E
= Emitter
Tab = Collector
Features
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-264)
Mounting Force
TO-264
PLUS247
(PLUS247)
300
260
1.13/10
20..120 /4.5..27
10
6
Optimized for Low Switching Losses
Square RBSOA
International Standard Packages
Positive Thermal Coefficient of
Vce(sat)
Avalanche Rated
High Current Handling Capability
Advantages
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 250A, V
GE
= 0V
= 500A, V
CE
= V
GE
T
J
= 150C
V
CE
= 0V, V
GE
=
20V
I
C
=
I
C110
, V
GE
= 15V, Note 1
T
J
= 150C
Characteristic Values
Min.
Typ.
Max.
1200
3.0
5.0
V
V
High Power Density
Low Gate Drive Requirement
Applications
V
CE
= V
CES
, V
GE
= 0V
25
A
1.5 mA
100
2.55
3.40
3.20
nA
V
V
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
© 2013 IXYS CORPORATION, All Rights Reserved
DS100451B(9/13)
IXYK120N120C3
IXYX120N120C3
Symbol Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
40
68
9850
580
218
412
I
C
=
I
C110
, V
GE
= 15V, V
CE
= 0.5 • V
CES
73
180
Inductive load, T
J
= 25°C
I
C
= 100A, V
GE
= 15V
Note 2
35
77
6.75
176
96
5.10
33
72
10.30
226
120
7.20
0.15
S
pF
pF
pF
nC
nC
nC
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
0.10 °C/W
°C/W
PLUS247
TM
Outline
TO-264 Outline
g
fs
C
ies
C
oes
C
res
Q
g(on)
Q
ge
Q
gc
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCS
I
C
= 60A, V
CE
= 10V, Note 1
V
CE
= 25V, V
GE
= 0V, f = 1MHz
V
CE
= 0.5 • V
CES
, R
G
= 1
Terminals:
1 = Gate
2,4 = Collector
3 = Emitter
V
CE
= 0.5 • V
CES
, R
G
= 1
Note 2
Inductive load, T
J
= 150°C
I
C
= 100A, V
GE
= 15V
Notes:
1. Pulse test, t
300μs, duty cycle, d
2%.
2. Switching times & energy losses may increase for higher V
CE
(clamp), T
J
or R
G
.
Terminals: 1 - Gate
2 - Collector
3 - Emitter
Dim.
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
Q
R
Millimeter
Min. Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXYK120N120C3
IXYX120N120C3
Fig. 1. Output Characteristics @ T
J
= 25ºC
240
V
GE
= 15V
13V
12V
11V
10V
300
V
GE
= 15V
12V
11V
10V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
200
9V
250
9V
I
C
- Amperes
160
120
8V
I
C
-
Amperes
200
150
8V
80
7V
40
6V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
100
7V
50
6V
0
0
2
4
6
8
10
12
14
16
18
20
V
CE
- Volts
V
CE
- Volts
Fig. 3. Output Characteristics @ T
J
= 150ºC
240
V
GE
= 15V
13V
12V
11V
10V
2.2
2.0
9V
1.8
V
GE
= 15V
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
200
I
C
- Amperes
160
V
CE(sat)
- Normalized
1.6
1.4
1.2
1.0
0.8
I
C
= 240A
120
8V
I
C
= 120A
80
7V
40
6V
5V
0
1
2
3
4
5
6
7
I
C
= 60A
0.6
0.4
-50
-25
0
25
50
75
100
125
150
175
0
V
CE
- Volts
T
J
- Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
8
T
J
= 25ºC
280
Fig. 6. Input Admittance
7
6
240
200
I
C
-
Amperes
V
CE
- Volts
5
I
C
= 240A
4
120A
160
120
T
J
= 150ºC
25ºC
- 40ºC
3
2
80
40
60A
1
6
7
8
9
10
11
12
13
14
15
0
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
V
GE
- Volts
V
GE
- Volts
© 2013 IXYS CORPORATION, All Rights Reserved
IXYK120N120C3
IXYX120N120C3
Fig. 7. Transconductance
140
120
100
T
J
= - 40ºC
16
14
12
25ºC
10
8
6
4
2
0
0
50
100
150
200
250
300
0
50
100
150
200
250
300
350
400
450
V
CE
= 600V
I
C
= 120A
I
G
= 10mA
Fig. 8. Gate Charge
g
f s
-
Siemens
80
150ºC
60
40
20
0
I
C
- Amperes
V
GE
- Volts
Q
G
- NanoCoulombs
Fig. 9. Capacitance
100,000
280
Fig. 10. Reverse-Bias Safe Operating Area
f
= 1 MHz
240
C ies
200
Capacitance - PicoFarads
10,000
I
C
- Amperes
160
120
80
T
J
= 150ºC
40
R
G
= 1
Ω
dv / dt < 10V / ns
1,000
C oes
100
1
0
C res
5
10
15
20
25
0
Fig. 11. Maximum Transient Thermal Impedance
30
35
40
100
300
500
700
900
1100
1300
V
CE
- Volts
V
CE
- Volts
Fig. 11. Maximum Transient Thermal Impedance
0.2
0.1
aaaaa
Z
(th)JC
- ºC / W
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYK120N120C3
IXYX120N120C3
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
10
9
8
E
off
V
CE
= 600V
E
on
-
18
8
E
off
7
6
V
CE
= 600V
10
E
on
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
14
---
I
C
= 100A
T
J
= 150ºC , V
GE
= 15V
16
14
----
12
R
G
= 1
Ω
V
GE
= 15V
E
off
- MilliJoules
E
off
- MilliJoules
E
on
- MilliJoules
E
on
- MilliJoules
7
6
5
4
I
C
= 50A
3
2
1
2
3
4
5
6
7
8
9
10
12
10
8
6
4
2
5
4
3
T
J
= 150ºC
8
6
4
T
J
= 25ºC
2
1
50
55
60
65
70
75
80
85
90
95
2
0
100
R
G
- Ohms
I
C
- Amperes
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
8
7
6
E
off
V
CE
= 600V
E
on
14
200
180
160
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
800
----
I
C
= 100A
t
fi
V
CE
= 600V
t
d(off)
- - - -
R
G
= 1
Ω
V
GE
= 15V
12
10
T
J
= 150ºC, V
GE
= 15V
700
600
500
I
C
= 100A
400
300
200
100
t
d(off)
- Nanoseconds
t
f i
- Nanoseconds
E
on
- MilliJoules
E
off
- MilliJoules
5
4
3
I
C
= 50A
2
1
25
50
75
100
125
8
6
4
2
0
150
140
120
100
80
60
1
2
3
I
C
= 50A
4
5
6
7
8
9
10
T
J
- Degrees Centigrade
R
G
- Ohms
200
180
160
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
t
fi
T
J
= 150ºC
V
CE
= 600V
320
300
280
160
150
140
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
t
fi
V
CE
= 600V
320
300
t
d(off)
- - - -
t
d(off)
- - - -
I
C
= 50A
R
G
= 1
Ω
, V
GE
= 15V
R
G
= 1
Ω
, V
GE
= 15V
280
t
d(off)
- Nanoseconds
t
f i
- Nanoseconds
t
f i
- Nanoseconds
t
d(off)
- Nanoseconds
140
120
100
80
60
40
20
50
55
60
65
70
75
80
85
90
95
T
J
= 25ºC
260
240
220
200
180
160
140
100
130
120
110
100
90
80
70
25
50
75
100
125
I
C
= 100A
260
240
220
200
180
160
140
150
I
C
- Amperes
T
J
- Degrees Centigrade
© 2013 IXYS CORPORATION, All Rights Reserved
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