Preliminary Technical Information
GenX3
TM
1200V IGBT
High speed PT IGBTs for
20-50kHz Switching
IXGR24N120C3D1
V
CES
=
I
C25
=
V
CE(sat)
≤
t
fi(typ)
=
1200V
48A
4.2V
110ns
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C100
I
CM
I
A
E
AS
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
F
C
T
L
T
SOLD
V
ISOL
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GE
= 1MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C, 1ms
T
C
= 25°C
T
C
= 25°C
V
GE
= 15V, T
J
= 125°C, R
G
= 5Ω
Clamped inductive load @V
CE
≤
1200V
T
C
= 25°C
Maximum Ratings
1200
1200
±20
±30
48
24
96
20
250
I
CM
= 48
200
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
mJ
A
W
°C
°C
°C
N/lb.
°C
°C
V
V
g
ISOPLUS 247
TM
(IXGR)
G
C
E
ISOLATED TAB
G = Gate
E = Emitter
C = Collector
TAB = Collector
Mounting force
Maximum lead temperature for soldering
1.6mm (0.062 in.) from case for 10s
50/60 Hz RMS, t = 1min
I
ISOL
< 1mA,
t = 20seconds
20..120/4.5..27
300
260
2500
3000
5
Features
•
DCB Isolated mounting tab
•
Meets TO-247AD package outline
•
High current handling capability
•
Latest generation HDMOS
TM
process
•
MOS Gate turn-on
-drive simplicity
•
Avalanche Rated
Applications
•
Switch-mode and resonant-mode
power supplies
•
Uninterruptible power supplies (UPS)
•
DC choppers
•
AC motor speed control
•
DC servo and robot drives
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 250μA, V
GE
= 0V
= 250μA, V
CE
= V
GE
T
J
= 125°C
Characteristic Values
Min.
Typ.
Max.
1200
2.5
5.0
100
1.5
±100
T
J
= 125°C
3.6
3.1
4.2
V
V
μA
mA
nA
V
V
V
CE
= V
CES
V
GE
= 0V
V
CE
= 0V, V
GE
=
±20V
I
C
= 20A, V
GE
= 15V, Note 2
Advantages
•
Space savings
•
Easy assembly
•
High power density
•
Very fast switching speeds for high
frequency applications
© 2008 IXYS CORPORATION, All rights reserved
DS99946(02/08)
IXGR24N120C3D1
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCK
Inductive load, T
J
= 125°C
°
I
C
= 20A, V
GE
= 15V
V
CE
= 600V, R
G
= 5Ω
Note 1
Inductive load, T
J
= 25°C
°
I
C
= 20A, V
GE
= 15V
V
CE
= 600V, R
G
= 5Ω
Note 1
I
C
= 24A, V
GE
= 15V, V
CE
= 0.5
•
V
CES
I
C
= 24A, V
CE
= 10V, Note 2
V
CE
= 25V, V
GE
= 0V, f = 1MHz
Characteristic Values
Min.
Typ.
Max.
10
17
1620
179
52
79
12
36
16
26
1.37
93
110
0.47
17
37
2.90
125
305
1.18
0.85
S
pF
pF
pF
nC
nC
nC
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
ISOPLUS247 (IXGR) Outline
2.00
0.15
1.00
°C/W
°C/W
Reverse Diode (FRED)
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
V
F
I
RM
t
rr
R
thJC
Notes:
1.
2.
Switching times may increase for V
CE
(Clamp) > 0.8 • V
CES
,
higher T
J
or increased R
G
.
Pulse test, t
≤
300μs; duty cycle, d
≤
2%.
I
F
= 30A, V
GE
= 0V
I
F
= 30A, V
GE
= 0V
Characteristic Values
Min. Typ.
Max.
T
J
= 125°C
5.5
220
2.75
1.80
11
V
V
A
ns
I
F
= 50A, -di
F
/dt = 100A/μs, V
R
= 600V
V
GE
= 0V, T
J
= 100°C
1.5
°C/W
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXGR24N120C3D1
Fig. 1. Output Characteristics
@ 25ºC
50
45
40
35
30
25
20
15
10
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
5V
0
0
2
4
6
8
10
12
14
16
18
20
22
24
26
7V
V
GE
= 15V
13V
11V
180
V
GE
= 15V
160
140
13V
Fig. 2. Extended Output Characteristics
@ 25ºC
I
C
-
Amperes
I
C
- Amperes
9V
120
100
80
60
40
20
7V
9V
11V
V
CE
- Volts
V
CE
- Volts
Fig. 3. Output Characteristics
@ 125ºC
50
45
40
35
V
GE
= 15V
13V
11V
1.4
1.3
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
V
GE
= 15V
I
9V
C
= 48A
V
CE(sat)
- Normalized
1.2
1.1
1.0
0.9
0.8
I
C
I
C
- Amperes
30
25
20
15
10
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
5V
7V
= 24A
0.7
0.6
-50
-25
0
25
50
I
C
= 12A
75
100
125
150
V
CE
- Volts
T
J
- Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
8.0
7.5
7.0
6.5
I
= 48A
24A
12A
T
J
= 25ºC
60
55
50
C
Fig. 6. Input Admittance
45
T
J
= - 40ºC
25ºC
125ºC
6.0
5.5
5.0
4.5
I
C
-
Amperes
40
35
30
25
20
15
V
CE
- Volts
4.0
3.5
3.0
5
6
7
8
9
10
11
12
13
14
15
10
5
0
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
V
GE
- Volts
V
GE
- Volts
© 2008 IXYS CORPORATION, All rights reserved
IXGR24N120C3D1
Fig. 7. Transconductance
26
24
22
20
T
J
= - 40ºC
16
14
12
25ºC
125ºC
V
CE
= 600V
I
C
= 24A
I
G
= 10mA
Fig. 8. Gate Charge
g
f s
-
Siemens
18
16
14
12
10
8
6
4
2
0
0
10
20
30
40
50
60
V
GE
- Volts
70
80
10
8
6
4
2
0
0
10
20
30
40
50
60
70
80
I
C
- Amperes
Q
G
- NanoCoulombs
Fig. 9. Capacitance
10,000
55
Fig. 10. Reverse-Bias Safe Operating Area
50
45
f
= 1 MHz
Capacitance - PicoFarads
40
I
C
- Amperes
1,000
Cies
35
30
25
20
Coes
100
15
10
Cres
10
0
5
10
15
20
25
30
35
40
5
0
200
T
J
= 125ºC
R
G
= 5
Ω
dV / dt < 10V / ns
400
600
800
1000
1200
1400
V
CE
- Volts
V
CE
- Volts
Fig. 11. Maximum Transient Thermal Impedance
10.00
Z
(th)JC
- ºC / W
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: G_24N120C3D1(4N)02-19-08
IXGR24N120C3D1
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
1.5
1.4
1.3
1.2
3.4
3.2
3.0
1.8
1.6
1.4
E
off
V
CE
= 600V
E
on
Fig. 13. Inductive Switching
Energy Loss vs. Collector Current
3.6
----
3.2
2.8
R
G
= 5
Ω
,
V
GE
= 15V
E
off
- MilliJoules
E
off
- MilliJoules
I
E
off
V
CE
= 600V
E
on
-
C
= 20A
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
E
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
4
2.4
T
J
= 125ºC
2.0
1.6
1.2
0.8
T
J
= 25ºC
11
12
13
14
15
16
17
18
19
20
0.4
0.0
E
on
on
---
- MilliJoules
- MilliJoules
T
J
= 125ºC , V
GE
= 15V
I
C
= 10A
1.4
1.2
6
8
10
12
14
16
18
20
R
G
- Ohms
I
C
- Amperes
Fig. 14. Inductive Switching
Energy Loss vs. Junction Temperature
1.4
1.2
1.0
0.8
0.6
0.4
I
C
= 10A
0.2
0.0
25
35
45
55
65
75
85
95
105
115
0.6
0.0
125
E
off
V
CE
= 600V
I
C
= 20A
2.4
1.8
1.2
E
on
4.2
360
340
320
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
400
----
R
G
= 5
Ω
,
V
GE
= 15V
3.6
3.0
t
f
V
CE
= 600V
t
d(off
)
- - - -
360
320
280
T
J
= 125ºC, V
GE
= 15V
t
d(off)
- Nanoseconds
E
off
- MilliJoules
t
f
- Nanoseconds
E
- MilliJoules
300
280
260
I
240
220
200
4
6
8
10
12
14
16
18
20
C
on
I
C
= 20A
240
200
= 10A
160
120
80
T
J
- Degrees Centigrade
R
G
- Ohms
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
380
340
300
130
125
300
120
350
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
140
t
f
V
CE
= 600V
t
d(off)
- - - -
130
R
G
= 5
Ω
, V
GE
= 15V
t
t
d(off)
- Nanoseconds
t
f
- Nanoseconds
260
220
180
140
100
60
20
10
11
12
13
14
15
16
17
18
19
20
T
J
= 25ºC
115
t
f
- Nanoseconds
T
J
= 125ºC
d(off)
250
I
200
C
120
= 20A
110
- Nanoseconds
t
f
V
CE
= 600V
t
d(off
)
- - - -
110
105
100
95
R
G
= 5
Ω
, V
GE
= 15V
150
I
C
= 10A
100
100
90
85
50
25
35
45
55
65
75
85
95
105
115
90
80
125
I
C
- Amperes
T
J
- Degrees Centigrade
© 2008 IXYS CORPORATION, All rights reserved
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