IXGP16N60B2 datasheet, PDF - EEWORLD Datasheet

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IXGP16N60B2: DescriptionInsulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size523KB，2 Pages; ManufacturerIXYS; Environmental Compliance

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IXGP16N60B2 Overview

Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN

IXGP16N60B2 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	IXYS
Parts packaging code	TO-220AB
package instruction	TO-220, 3 PIN
Contacts	3
Reach Compliance Code	compliant
Shell connection	COLLECTOR
Maximum collector current (IC)	40 A
Collector-emitter maximum voltage	600 V
Configuration	SINGLE
Gate emitter threshold voltage maximum	5.5 V
Gate-emitter maximum voltage	20 V
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	150 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	PURE TIN
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	POWER CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	280 ns
Nominal on time (ton)	43 ns

IXGP16N60B2 Preview

Advance Technical Information

HiPerFAST

IGBT

B2-Class High Speed IGBT

IXGA 16N60B2

IXGP 16N60B2

IXGA 16N60B2D1

IXGP 16N60B2D1

CES

= 600 V

= 40 A

C25

CE(sat)

= 2.3 V

fi(typ)

= 80 ns

Symbol

CES

CGR

GES

GEM

C25

C110

D110

SSOA

(RBSOA)

stg

Test Conditions

= 25°C to 150°C

= 25°C to 150°C; R

= 1 MΩ

Continuous

Transient

= 25°C

= 110°C

= 110°C (IXG_16N60B2D1 diode)

= 25°C, 1 ms

= 15 V, T

= 125°C, R

= 22

Ω

Clamped inductive load

= 25°C

Maximum Ratings

600

±20

±30

100

= 32

@0.8 V

CES

150

-55 ... +150

150

-55 ... +150

TO-263 (IXGA)

C (TAB)

TO-220 (IXGP)

°C

Features

°C

G = Gate

E = Emitter

C E

(TAB)

C = Collector

TAB = Collector

Mounting torque

(M3.5 screw)

0.55/5 Nm/lb.in.

300

260

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

Maximum tab temperature

soldering SMD devices for 10s

Weight

TO-220

TO-263

Symbol

Test Conditions

Characteristic Values

= 25°C, unless otherwise specified)

min. typ. max.

2.5

16N60B2

16N60B2D1

5.0

±100

2.3

=125°C

1.8

µA

International standard packages

IGBT and anti-parallel FRED for

resonant power supplies

- Induction heating

- Rice cookers

MOS Gate turn-on

- drive simplicity

Fast Recovery Expitaxial Diode (FRED)

- soft recovery with low I

Advantages

Saves space (two devices in one

package)

Easy to mount with 1 screw

Reduces assembly time and cost

GE(th)

CES

GES

CE(sat)

= 250

µA,

= V

CES

= 0 V

= 0 V, V

±20

= 12A

= 15 V

Note 2

DS99141A(3/04)

IXGP 16N60B2 IXGA 16N60B2D1

IXGA 16N60B2 IXGA 16N60B2D1

Symbol

Test Conditions

Characteristic Values

= 25°C, unless otherwise specified)

min. typ. max.

780

16N620B2

16N60B2D1

= 20A, V

= 15 V, V

= 0.5 V

CES

Inductive load, T

= 25°C

= 12 A; V

= 15 V

= 400 V; R

= R

off

= 22

Ω

Note 1.

150

Inductive load, T

= 125°C

= 12A; V

= 15 V

= 400 V; R

= R

off

= 22

Ω

Note 1

(16N60B2)

0.35

110

170

350

(IXGP)

0.5

150

260

µJ

0.83 K/W

K/W

TO-263 Outline

Pins:

1 - Gate

3 - Emitter

TO-220 Outline

ies

oes

res

d(on)

d(off)

off

d(on)

d(off)

off

thJC

thCK

= 12A; V

= 10 V,

Note 2.

= 25 V, V

= 0 V, f = 1 MHz

Reverse Diode (FRED)

Symbol

thJC

Notes:

Test Conditions

= 10 A, V

= 0 V

= 125

°C

Characteristic Values

= 25°C, unless otherwise specified)

min. typ. max.

2.66

1.66

2.5

110

2.5 K/W

Dim.

Millimeter

Min.

Max.

4.06

2.03

0.51

1.14

0.46

1.14

8.64

7.11

9.65

6.86

2.54

14.61

2.29

1.02

1.27

0.46

4.83

2.79

0.99

1.40

0.74

1.40

9.65

8.13

10.29

8.13

BSC

15.88

2.79

1.40

1.78

0.38

0.74

Inches

Min. Max.

.160

.080

.020

.045

.018

.045

.340

.280

.380

.270

.100

.575

.090

.040

.050

.018

.190

.110

.039

.055

.029

.055

.380

.320

.405

.320

BSC

.625

.110

.055

.070

.015

.029

= 12 A; -di

/dt = 100 A/µs, V

= 100 V

= 0 V; T

= 125

°C

= 1 A; -di

/dt = 100 A/µs; V

= 30 V, V

= 0 V

1. Switching times may increase for V

(Clamp) > 0.8 • V

CES

, higher T

increased R

2. Pulse test, t < 300

µs,

duty cycle d < 2 %

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more

of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665

6,534,343

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