DMP58D0SV
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
•
•
•
•
•
•
•
Low On-Resistance
ESD Protected Gate to 500V
Low Input Capacitance
Fast Switching Speed
Lead Free By Design/RoHS Compliant (Note 3)
“Green” Device (Note 4)
Qualified to AEC-Q 101 Standards for High Reliability
Mechanical Data
•
•
•
•
•
•
•
•
SOT-563
D
2
G
1
S
1
Case: SOT-563
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish
⎯
Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.006 grams (approximate)
S
2
G
2
D
1
ESD protected to 500V
TOP VIEW
TOP VIEW
Internal Schematic
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
V
DSS
V
DGR
V
GSS
I
D
Value
-50
-50
±20
-160
Units
V
V
V
mA
Characteristic
Drain-Source Voltage
Drain-Gate Voltage (Note 1)
Gate-Source Voltage
Drain Current (Note 2)
Continuous
Continuous
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Symbol
P
D
R
θ
JA
T
J
, T
STG
Value
400
313
-55 to +150
Units
mW
°C/W
°C
Characteristic
Total Power Dissipation (Note 2)
Thermal Resistance, Junction to Ambient (Note 2)
Operating and Storage Temperature Range
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes:
@T
A
= 25°C unless otherwise specified
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
g
FS
C
iss
C
oss
C
rss
Min
-50
⎯
⎯
-0.8
⎯
0.05
⎯
⎯
⎯
Typ
⎯
⎯
⎯
⎯
6
⎯
27
4
1.4
Max
⎯
-1
±5
-2.1
8
⎯
⎯
⎯
⎯
Unit
V
μA
μA
V
Ω
S
pF
pF
pF
Test Condition
V
GS
= 0V, I
D
= -250μA
V
DS
= -50V, V
GS
= 0V
V
GS
=
±20V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= -250μA
V
GS
= -5V, I
D
= -0.100A
V
DS
= -25V, I
D
= -0.1A
V
DS
= -25V, V
GS
= 0V, f = 1.0MHz
1. R
GS
≤
20KΩ.
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. No purposefully added lead.
4. Diodes Inc’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Short duration pulse test used to minimize self-heating effect.
DMP58D0SV
Document number: DS31293 Rev. 4 - 2
1 of 5
www.diodes.com
July 2009
© Diodes Incorporated
DMP58D0SV
0.50
0.4
-I
D
, DRAIN CURRENT (A)
0.40
V
GS
= -10V
V
GS
= -4.5V
0.30
-I
D
, DRAIN CURRENT (A)
0.3
V
GS
= -5V
T
A
= 25°C
0.2
T
A
= -55°C
T
A
= 150°C
T
A
= 85°C
0.20
0.1
0.10
V
GS
= -2.5V
0.00
V
GS
= -1.8V
0
0.5
1.5 2 2.5 3 3.5 4 4.5
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
1
5
0
1
1.5
2
2.5
3
3.5
4
-V
GS
, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
4.5
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
V
GS
= -5V
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
10
100
V
GS
= -10V
T
A
= 125°C
T
A
= 150°C
10
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
1
0.001
1
0
0.1
0.15
0.2
0.25
0.3
-I
D
, DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
0.05
0.01
0.1
-I
D
, DRAIN CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
1
2.0
1.8
R
DS(ON)
, DRAIN-TO-SOURCE
RESISTANCE (NORMALIZED)
1.6
1.4
1.2
1.0
0.8
0.6
-50
C, CAPACITANCE (pF)
V
GS
= -10V
I
D
= -250mA
30
C
iss
25
20
f = 1MHz
V
GS
= 0V
V
GS
= -5V
I
D
= -100mA
15
10
C
oss
C
rss
5
0
0
5
10
15
20
25
30
35
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 6 Typical Capacitance
40
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
DMP58D0SV
Document number: DS31293 Rev. 4 - 2
2 of 5
www.diodes.com
July 2009
© Diodes Incorporated
DMP58D0SV
1.8
-V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
-50
0.001
0.2
0.4
0.6
0.8
1
-V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.2
I
D
= -250µA
1
V
GS
= 0V
-I
S
, SOURCE CURRENT (A)
0.1
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
0.01
T
A
= 25°C
T
A
= -55°C
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.9
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 313°C/W
P(pk)
D = 0.02
0.01
D = 0.01
D = 0.005
t
1
D = Single Pulse
t
2
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/t
2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t
1
, PULSE DURATION TIME (s)
Fig. 9 Transient Thermal Response
10
100
1,000
Ordering Information
Part Number
DMP58D0SV -7
Notes:
(Note 6)
Case
SOT-563
Packaging
3000/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
(Note 7)
MPA
YM
MPA = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: U = 2007)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
Notes:
2007
U
Jan
1
Feb
2
2008
V
Mar
3
2009
W
Apr
4
2010
X
May
5
Jun
6
2011
Y
Jul
7
2012
Z
Aug
8
2013
A
Sep
9
Oct
O
2014
B
Nov
N
2015
C
Dec
D
7. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).
DMP58D0SV
Document number: DS31293 Rev. 4 - 2
3 of 5
www.diodes.com
July 2009
© Diodes Incorporated
DMP58D0SV
Package Outline Dimensions
A
B
C
D
G
K
M
SOT-563
Dim Min
Max
Typ
A
0.15 0.30 0.20
B
1.10 1.25 1.20
C
1.55 1.70 1.60
D
-
-
0.50
G
0.90 1.10 1.00
H
1.50 1.70 1.60
K
0.55 0.60 0.60
L
0.10 0.30 0.20
M
0.10 0.18 0.11
All Dimensions in mm
H
L
Suggested Pad Layout
C2
C2
Z
G
C1
Y
X
Dimensions Value (in mm)
Z
2.2
G
1.2
X
0.375
Y
0.5
C1
1.7
C2
0.5
DMP58D0SV
Document number: DS31293 Rev. 4 - 2
4 of 5
www.diodes.com
July 2009
© Diodes Incorporated
DMP58D0SV
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2009, Diodes Incorporated
www.diodes.com
DMP58D0SV
Document number: DS31293 Rev. 4 - 2
5 of 5
www.diodes.com
July 2009
© Diodes Incorporated
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