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VI30100SG-E3

Description
High Voltage Trench MOS Barrier Schottky Rectifier
File Size159KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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VI30100SG-E3 Overview

High Voltage Trench MOS Barrier Schottky Rectifier

V30100SG-E3, VF30100SG-E3, VB30100SG-E3, VI30100SG-E3
www.vishay.com
Vishay General Semiconductor
Ultra Low V
F
= 0.437 V at I
F
= 5 A
High Voltage Trench MOS Barrier Schottky Rectifier
TMBS
®
TO-220AB
ITO-220AB
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
2
V30100SG
PIN 1
PIN 2
CASE
3
1
VF30100SG
PIN 1
PIN 2
2
3
1
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB, ITO-220AB, and
TO-262AA package)
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
PIN 3
PIN 3
TO-263AB
K
K
TO-262AA
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
A
NC
1
VB30100SG
NC
A
K
HEATSINK
2
3
MECHANICAL DATA
Case:
TO-220AB,
ITO-220AB,
TO-263AB
and
TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
per
VI30100SG
PIN 1
PIN 2
K
PIN 3
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 30 A
T
J
max.
Package
Diode variation
30 A
100 V
250 A
0.76 V
150 °C
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
Single die
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Non-repetitive avalanche energy at T
J
= 25 °C, L = 90 mH
Peak repetitive reverse current at t
p
= 2 μs, 1 kHz,
T
J
= 38 °C ± 2 °C
Voltage rate of change (rated V
R
)
Isolation voltage (ITO-220AB only) from terminal to heatsink
t = 1 min
Operating junction and storage temperature range
SYMBOL
V
RRM
I
F(AV)
I
FSM
E
AS
I
RRM
dV/dt
V
AC
T
J
, T
STG
V30100SG
VF30100SG
VB30100SG
30
250
230
1.0
10 000
1500
-40 to +150
VI30100SG
UNIT
V
A
A
mJ
A
V/μs
V
°C
100
Revision: 11-Sep-13
Document Number: 88996
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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Description High Voltage Trench MOS Barrier Schottky Rectifier High Voltage Trench MOS Barrier Schottky Rectifier High Voltage Trench MOS Barrier Schottky Rectifier High Voltage Trench MOS Barrier Schottky Rectifier
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