H1061-BP datasheet, PDF - EEWORLD Datasheet

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H1061-BP: DescriptionSmall Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, TO-220, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size133KB，1 Pages; ManufacturerMicro Commercial Components (MCC); Environmental Compliance

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H1061-BP Overview

Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, TO-220, 3 PIN

H1061-BP Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Micro Commercial Components (MCC)
Parts packaging code	TO-220AB
package instruction	TO-220, 3 PIN
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	3 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	35
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	MATTE TIN
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON

H1061-BP Preview

MCC

Micro Commercial Components

omponents

20736

Marilla

Street Chatsworth

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$ % !"#

H1061

Features

•

Power amplifier applications

Transistor with TO-220 package

NPN Silicon

Power Transistors

Rating

4.0

3.0

-55 to +150

Unit

Maximum Ratings

Symbol

CEO

CBO

EBO

STG

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Collector power dissipation

Junction Temperature

Storage Temperature

TO-220

Electrical Characteristics @ 25

C Unless Otherwise Specified

Symbol

Parameter

Collector Base Breakdown Voltage

=5.0mAdc, I

=0)

Collector-Emitter Breakdown Voltage

=50mAdc, I

=0)

Emitter-Base Breakdown Voltage

=5.0mAdc, I

=0)

Collector-Base Cutoff Current

=20Vdc,I

=0)

Forward Current Transfer Ratio

=0.1Adc, V

=4.0Vdc)

Forward Current Transfer Ratio

=1.0Adc, V

=4.0Vdc)

Forward Current Transfer Ratio

Collector-Emitter Saturation Voltage

=2.0Adc, I

=0.2Adc)

Min

4.0

---

Max

---

100

Units

Vdc

uAdc

H H

PIN 1.

PIN 2.

PIN 3.

BASE

COLLECTOR

EMITTER

OFF CHARACTERISTICS

CBO

CEO

EBO

CBO

14.22

9.65

2.54

5.84

9.65

------

12.70

2.29

0.51

0.30

3.53

3.56

1.14

2.03

15.88

10.67

3.43

6.86

10.67

6.35

14.73

2.79

1.14

0.64

4.09

4.83

1.40

2.92

ON CHARACTERISTICS

FE-1

FE-2

FE-3

CE(sat)

5.0

---

320

---

1.0

---

Vdc

INCHES

.560

.625

.380

.420

.100

.135

.230

.270

.380

.420

------

.250

.500

.580

.090

.110

.020

.045

.012

.025

.139

.161

.140

.190

.045

.055

.080

.115

www.mccsemi.com

Revision: 2

2003/06/10

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