Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, TO-251AA
| Parameter Name | Attribute value |
| Maker | Harris |
| package instruction | IN-LINE, R-PSIP-T3 |
| Reach Compliance Code | unknown |
| Collector-emitter maximum voltage | 1200 V |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| JEDEC-95 code | TO-251AA |
| JESD-30 code | R-PSIP-T3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Polarity/channel type | N-CHANNEL |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Transistor component materials | SILICON |