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IRF630N

Description
MOSFETs;9.3A;200V;TO-220
File Size246KB,2 Pages
ManufacturerInchange Semiconductor
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IRF630N Overview

MOSFETs;9.3A;200V;TO-220

IRF630N Parametric

Parameter NameAttribute value
MakerInchange Semiconductor
package instruction,
Reach Compliance Codeunknown

IRF630N Preview

isc N-Channel MOSFET Transistor
·FEATURES
·Static
drain-source on-resistance:
R
DS
(on) ≤0.3Ω
·Enhancement
mode
·Fast
Switching Speed
·100%
avalanche tested
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION
·
Efficient and reliable device for use in a wide variety of applications
·ABSOLUTE
MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
DSS
V
GS
I
D
I
DM
P
D
T
j
T
stg
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Single Pulsed
Total Dissipation @T
C
=25℃
Max. Operating Junction Temperature
Storage Temperature
VALUE
200
±20
9.3
37
82
175
-55~175
UNIT
V
V
A
A
W
IRF630N,IIRF630N
·THERMAL
CHARACTERISTICS
SYMBOL
Rth(ch-c)
Rth(ch-a)
PARAMETER
Channel-to-case thermal resistance
Channel-to-ambient thermal resistance
MAX
1.83
62
UNIT
℃/W
℃/W
isc website:www.iscsemi.cn
1
isc & iscsemi is registered trademark
isc N-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
BV
DSS
PARAMETER
Drain-Source Breakdown Voltage
Gate Threshold Voltage
CONDITIONS
V
GS
=0V; I
D
=250μA
V
DS
=V
GS
; I
D
=250μA
IRF630N,IIRF630N
MIN
200
2
TYP
MAX
UNIT
V
V
GS
(th
)
4
V
R
DS(
on
)
Drain-Source On-Resistance
V
GS
=10V; I
D
=5.4A
0.3
Ω
I
GSS
I
DSS
V
SD
Gate-Source Leakage Current
Drain-Source Leakage Current
Diode forward voltage
V
GS
= ±20V
V
DS
=200V; V
GS
= 0V
±0.1
25
1.3
μA
μA
I
F
=5.4A; V
GS
= 0V
V
NOTICE:
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc website:www.iscsemi.cn
2
isc & iscsemi is registered trademark
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