V10170C-M3
www.vishay.com
Vishay General Semiconductor
Ultra Low V
F
= 0.57 V at I
F
= 2.5 A
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
®
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
2
1
3
TMBS
TO-220AB
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
V10170C
PIN 1
PIN 3
PIN 2
CASE
MECHANICAL DATA
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 5.0 A
T
J
max.
Package
Diode variation
2x5A
170 V
80 A
0.65 V
175 °C
TO-220AB
Dual common cathode
Case:
TO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
I
F(AV)
I
FSM
dV/dt
T
J
, T
STG
SYMBOL
V
RRM
V10170C
170
10
A
5
80
10 000
-40 to +175
A
V/μs
°C
UNIT
V
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
Revision: 04-Dec-13
Document Number: 89940
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
V10170C-M3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
I
F
= 2.5 A
Instantaneous forward voltage per diode
I
F
= 5.0 A
I
F
= 2.5 A
I
F
= 5.0 A
V
R
= 136 V
Reverse current per diode
V
R
= 170 V
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
20 ms
T
A
= 25 °C
V
F (1)
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
I
R (2)
SYMBOL
TYP.
0.74
0.84
0.57
0.65
0.3
0.9
-
1.3
MAX.
-
1.03
-
0.74
-
-
90
10
μA
mA
μA
mA
V
UNIT
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
per diode
Typical thermal resistance
per device
R
JC
SYMBOL
V10170C
3.0
°C/W
1.7
UNIT
ORDERING INFORMATION
(Example)
PACKAGE
TO-220AB
PREFERRED P/N
V10170C-M3/4W
UNIT WEIGHT (g)
1.87
PACKAGE CODE
4W
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
Average Forward Rectified Current (A)
6
5
4
3
2
1
0
0
25
50
75
100
125
150
175
Rth
J-A
=Rth
J-C
4.4
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
0
1
2
3
D = 0.3
D = 0.2
D = 0.1
D = 0.5 D = 0.8
Average Power Loss (W)
D = 1.0
T
D = t
p
/T
t
p
4
5
6
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 04-Dec-13
Document Number: 89940
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
V10170C-M3
www.vishay.com
100
10 000
T
A
= 175 °C
10
T
A
= 150 °C
T
A
= 125 °C
1
T
A
= 100 °C
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
1000
Vishay General Semiconductor
Instantaneous Forward Current (A)
Junction Capacitance (pF)
1.2
1.4
1.6
100
T
A
= 25 °C
0.1
0
0.2
0.4
0.6
0.8
1.0
10
0.1
1
10
100
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
100
10
1
0.1
T
A
= 100 °C
0.01
0.001
T
A
= 25 °C
0.0001
20
40
60
80
100
T
A
= 175 °C
10
Junction to Case
T
A
= 150 °C
T
A
= 125 °C
1
0.1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance Per Device
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
TO-220AB
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.635 (16.13)
0.625 (15.87)
3
0.603 (15.32)
0.573 (14.55)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
1
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
PIN
2
Revision: 04-Dec-13
Document Number: 89940
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000
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