BFR750L3RH
Linear Low Noise SiGe:C Bipolar RF Transistor
•
High gain ultra low noise RF transistor
•
Based on Infineon's reliable high volume Silicon
Germanium technology
•
Provides outstanding performance for a wide range
of wireless applications up to 10 GHz
•
Ideal for WLAN and all 5-6 GHz applications
•
High
OIP3
and
P
-1dB
for driver stages
•
High maximum stable and available gain
G
ms
= 21 dB at 1.8 GHz,
G
ma
= 11.5 dB at 6 GHz
•
Pb-free (RoHS compliant) and halogen-free very thin
small leadless package (package height 0.32 mm max.
ideal for modules)
•
Qualification report according to AEC-Q101 available
ESD
(
E
lectro
s
tatic
d
ischarge) sensitive device, observe handling precaution!
Type
BFR750L3RH
Marking
R8
Pin Configuration
1=B
2=C
3=E
Package
TSLP-3-9
1
2013-09-09
BFR750L3RH
Maximum Ratings
at
T
A
= 25 °C, unless otherwise specified
Parameter
Symbol
V
CEO
Value
Unit
Collector-emitter voltage
T
A
= 25 °C
T
A
= -55 °C
V
4
3.5
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
1)
T
S
≤
96°C
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
J
T
Stg
Symbol
R
thJS
13
13
1.2
90
9
360
150
-55 ... 150
Value
Unit
mA
mW
°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
2)
150
K/W
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified
Symbol
Values
Parameter
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 3 mA,
I
B
= 0
Collector-emitter cutoff current
V
CE
= 13 V,
V
BE
= 0
Collector-base cutoff current
V
CB
= 5 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 0.5 V,
I
C
= 0
DC current gain
I
C
= 60 mA,
V
CE
= 3 V, pulse measured
1
T
S
is
Unit
max.
-
100
100
10
400
V
µA
nA
µA
-
typ.
4.7
-
-
-
250
V
(BR)CEO
I
CES
I
CBO
I
EBO
h
FE
4
-
-
-
160
measured on the emitter lead at the soldering point to the pcb
2
For
the definition of
R
thJS
please refer to Application Note AN077 (Thermal Resistance Calculation)
2
2013-09-09
BFR750L3RH
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified
Symbol
Values
Parameter
min.
AC Characteristics
(verified by random sampling)
Transition frequency
I
C
= 60 mA,
V
CE
= 3 V,
f
= 2 GHz
Collector-base capacitance
V
CB
= 3 V,
f
= 1 MHz, emitter grounded
Collector emitter capacitance
V
CE
= 3 V,
f
= 1 MHz, base grounded
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz, collector grounded
Minimum noise figure
I
C
= 25 mA,
V
CE
= 3 V,
f
= 1.8 GHz,
Z
S
=
Z
Sopt
I
C
= 25 mA,
V
CE
= 3 V,
f
= 6 GHz,
Z
S
=
Z
Sopt
Power gain, maximum stable
1)
I
C
= 60 mA,
V
CE
= 3 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 1.8 GHz
Power gain, maximum available
1)
I
C
= 60 mA,
V
CE
= 3 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 6 GHz
Transducer gain
I
C
= 60 mA,
V
CE
= 3 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 1.8 GHz
I
C
= 60 mA,
V
CE
= 3 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 6 GHz
Third order intercept point at output
2)
V
CE
= 3 V,
I
C
= 60 mA,
f
= 1.8 GHz,
Z
S
=
Z
L
= 50
Ω
1dB compression point at output
I
C
= 60 mA,
V
CE
= 3 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 1.8 GHz
1/2
ma = |S21e /
S
12e | (k-(k²-1) ),
G
ms = |S21e /
S
12e|
2
IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
1
G
Unit
max.
-
0.42
-
-
dB
GHz
pF
typ.
37
0.24
0.31
0.97
f
T
C
cb
C
ce
C
eb
NF
min
-
-
-
-
-
-
G
ms
-
0.6
1.1
21
-
-
-
dB
G
ma
-
11.5
-
dB
|S
21e
|
2
-
-
IP3
-
18
8
29.5
-
-
-
dB
dBm
P
-1dB
-
16.5
-
3
2013-09-09
BFR750L3RH
Total power dissipation
P
tot
=
ƒ
(T
S
)
Permissible Puls Load
R
thJS
=
ƒ
(t
p
)
400
350
300
2
10
250
Ptot [mW]
thJS
200
[K/W]
150
1
10
100
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D=0
→
t
p
←
D=t
p
/T
50
R
←
T
0
0
15
30
45
60
75
90
105
120
135
150
0
10
−8
10
−6
10
→
−4
10
−2
10
0
10
T
S
[°C]
tp [s]
Permissible Pulse Load
P
totmax
/P
totDC
=
ƒ
(t
p
)
Collector-base capacitance
C
cb
=
ƒ
(V
CB
)
f
= 1 MHz
2
10
0.6
→
t
p
←
D=t
p
/T
0.55
0.5
←
T
→
0.45
0.4
cb
1
10
D=0
D = 0.005
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
0.35
P
totmax
/P
totDC
C [pF]
−2
10
0
10
0.3
0.25
0.2
0.15
0.1
0.05
0
10
−8
10
−6
10
−4
10
0
0
2
4
6
8
10
12
tp [s]
V
CB
[V]
4
2013-09-09
BFR750L3RH
Transition frequency
f
T
=
ƒ
(I
C
)
V
CE
= parameter,
f
= 1 GHz
Power gain
G
ma
,
G
ms
=
ƒ
(f)
V
CE
= 3 V,
I
C
= 60 mA
45
40
2V to 4V
40
35
35
1.00V
30
30
25
25
0.75V
G
ms
f
T
[GHz]
G [dB]
20
15
20
15
|S |
2
21
10
10
5
5
0.50V
0
0
10
20
30
40
50
60
70
80
0
0
1
2
3
4
5
6
I
C
[mA]
f [GHz]
Power gain
G
ma
,
G
ms
=
ƒ
(I
C
)
V
CE
= 3 V
f
= parameter
28
Power gain
G
ma
,
G
ms
=
ƒ
(V
CE
)
I
C
= 60 mA
f
= parameter
27
0.90GHz
26
0.90GHz
24
24
21
1.80GHz
2.40GHz
22
1.80GHz
20
18
3.00GHz
G [dB]
G [dB]
2.40GHz
18
15
4.00GHz
5.00GHz
12
16
3.00GHz
9
6.00GHz
14
4.00GHz
5.00GHz
6
12
6.00GHz
10
3
8
0
10
20
30
40
50
60
70
80
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
I
C
[mA]
V
CE
[V]
5
2013-09-09
京公网安备 11010802033920号
EEWORLD
