PROFET® BTS612N1
Smart Two Channel High-Side Power Switch
Product Summary
Overvoltage protection
Operating voltage
Features
Overload protection
Current limitation
Short circuit protection
Thermal shutdown
Overvoltage protection (including load dump)
Fast demagnetization of inductive loads
Reverse battery protection
1
)
Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
Open drain diagnostic output
Open load detection in OFF-state
CMOS compatible input
Loss of ground and loss of
V
bb
protection
Electrostatic discharge
(ESD) protection
Green Product (RoHS compliant)
AEC Qualified
V
bb(AZ)
V
bb(on)
43
5.0 ... 34
both
V
V
channels:
On-state resistance
R
ON
Load current (ISO)
I
L(ISO)
Current limitation
I
L(SCr)
each
parallel
200
100 m
2.3
4.4
A
4
4
A
PG-TO263-7-2
Application
C
compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
All types of resistive, inductive and capacitve loads
Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
Voltage
source
Overvoltage
protection
Current
lim it 1
+ V bb
Gate 1
protection
4
V
Logic
Voltage
sensor
Level shifter
Rectifier 1
Lim it for
unclam ped
ind. loads 1
Open load
Short to Vbb
detection 1
Current
lim it 2
Gate 2
protection
OUT1
Tem perature
sensor 1
1
3
6
5
IN1
IN2
ESD
ST
Logic
Charge
pum p 1
Charge
pum p 2
Level shifter
Rectifier 2
Lim it for
unclam ped
ind. loads 2
Open load
Short to Vbb
detection 2
OUT2
Tem perature
sensor 2
7
Load
PROFET
2
GND
Signal GND
Load GND
1
)
With external current limit (e.g. resistor R
GND
=150
)
in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Data Sheet
1
2013-10-11
BTS612N1
Pin
1
2
3
4
5
6
7
Symbol
OUT1 (Load, L)
GND
IN1
Vbb
ST
IN2
OUT2 (Load, L)
Function
Output 1, protected high-side power output of channel 1
Logic ground
Input 1, activates channel 1 in case of logical high signal
Positive power supply voltage,
the tab is shorted to this pin
Diagnostic feedback: open drain, low on failure
Input 2, activates channel 2 in case of logical high signal
Output 2, protected high-side power output of channel 2
Maximum Ratings
at
T
j
= 25 °C unless otherwise specified
Parameter
Supply voltage (overvoltage protection see page 4)
Supply voltage for short circuit protection
T
j Start
=-40 ...+150°C
2
Load dump protection
)
V
LoadDump
=
U
A
+
V
s
,
U
A
= 13.5 V
R
I
3)
= 2
,
R
L
= 5.3
,
t
d
= 200 ms, IN= low or high
Load current (Short circuit current, see page 5)
Operating temperature range
Storage temperature range
Power dissipation (DC), T
C
25 °C
Inductive load switch-off energy dissipation, single pulse
V
bb
= 12V,
T
j,start
= 150°C,
T
C
= 150°C const.
one channel,
I
L
= 2.3 A, Z
L
= 89 mH, 0
:
both channels parallel,
I
L
= 4.4 A, Z
L
= 47 mH, 0
:
see diagrams on page 9
Symbol
V
bb
V
bb
V
Load dump
)
I
L
T
j
T
stg
P
tot
E
AS
4
Values
43
34
60
self-limited
-40 ...+150
-55 ...+150
36
290
580
1.0
2.0
-10 ... +16
2.0
5.0
Unit
V
V
V
A
°C
W
mJ
Electrostatic discharge capability (ESD)
(Human Body Model)
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 7
IN:
V
ESD
all other pins:
V
IN
I
IN
I
ST
kV
V
mA
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
2
)
3
)
4
)
Supply voltages higher than V
bb(AZ)
require an external current limit for the GND and status pins, e.g. with a
150
resistor in the GND connection and a 15 k resistor in series with the status pin. A resistor for the
protection of the input is integrated.
R
I
= internal resistance of the load dump test pulse generator
V
Load dump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Data Sheet
2
2013-10-11
BTS612N1
Thermal Characteristics
Parameter and Conditions
Thermal resistance
Symbol
min
--
--
--
Values
typ
max
--
3.5
--
7.0
--
75
37
Unit
K/W
chip - case, both channels:
R
thJC
each channel:
junction - ambient (free air):
R
thJA
SMD version, device on PCB
5
)
:
Electrical Characteristics
Parameter and Conditions,
each channel
at
T
j
= 25 °C,
V
bb
= 12 V unless otherwise specified
Symbol
Values
min
typ
max
Unit
Load Switching Capabilities and Characteristics
On-state resistance (pin 4 to 1 or 7)
I
L
= 1.8 A
T
j
=25 °C:
R
ON
--
1.8
3.5
--
160
320
2.3
4.4
--
200
400
--
--
10
A
mA
s
m
each channel
T
j
=150 °C:
Nominal load current, ISO Norm (pin 4 to 1 or 7)
V
ON
= 0.5 V,
T
C
= 85 °C
each channel:
I
L(ISO)
both channels parallel:
Output current (pin
1
or 7) while GND disconnected
or GND pulled up,
V
bb
=30 V,
V
IN
= 0, see diagram
page 8
Turn-on time
IN
to 90%
V
OUT
:
Turn-off time
IN
to 10%
V
OUT
:
R
L
= 12
,
T
j
=-40...+150°C
Slew rate on
10 to 30%
V
OUT
,
R
L
= 12
,
T
j
=-40...+150°C
Slew rate off
70 to 40%
V
OUT
,
R
L
= 12
,
T
j
=-40...+150°C
I
L(GNDhigh)
t
on
t
off
dV /dt
on
-dV/dt
off
80
80
0.1
0.1
200
200
--
--
400
400
1
1
V/s
V/s
5
)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70m thick) copper area for Vbb
connection. PCB is vertical without blown air.
Data Sheet
3
2013-10-11
BTS612N1
Parameter and Conditions,
each channel
at
T
j
= 25 °C,
V
bb
= 12 V unless otherwise specified
Symbol
Values
min
typ
max
Unit
Operating Parameters
Operating voltage
6
)
Undervoltage shutdown
Undervoltage restart
T
j
=-40...+150°C:
T
j
=-40...+150°C:
T
j
=-40...+25°C:
T
j
=+150°C:
Undervoltage restart of charge pump
see diagram page 12
Undervoltage hysteresis
V
bb(under)
=
V
bb(u rst)
-
V
bb(under)
Overvoltage shutdown
T
j
=-40...+150°C:
Overvoltage restart
T
j
=-40...+150°C:
Overvoltage hysteresis
T
j
=-40...+150°C:
7
)
Overvoltage protection
T
j
=-40...+150°C:
I
bb
=40 mA
Standby current (pin 4)
,
V
IN
=0
T
j
=-40...+150°C:
Operating current (Pin 2)
8
)
,
V
IN
=5 V
both channels on,
T
j
=-40...+150°C,
Operating current (Pin 2)
8)
one channel on,
T
j
=-40...+150°C:,
V
bb(on)
V
bb(under)
V
bb(u rst)
V
bb(ucp)
V
bb(under)
V
bb(over)
V
bb(o rst)
V
bb(over)
V
bb(AZ)
I
bb(off)
I
GND
I
GND
5.0
3.5
--
--
--
34
33
--
42
--
--
--
5.6
0.2
--
--
0.5
47
34
5.0
5.0
7.0
7.0
--
43
--
--
--
V
V
V
V
V
V
V
V
V
A
--
--
--
90
0.6
0.4
150
1.2
0.7
mA
mA
6
)
7
)
8
)
At supply voltage increase up to
V
bb
= 5.6 V typ without charge pump,
V
OUT
V
bb
- 2 V
See also
V
ON(CL)
in table of protection functions and circuit diagram page 8.
Add
I
ST
, if
I
ST
> 0, add
I
IN
, if
V
IN
>5.5 V
Data Sheet
4
2013-10-11
BTS612N1
Parameter and Conditions,
each channel
at
T
j
= 25 °C,
V
bb
= 12 V unless otherwise specified
Symbol
Values
min
typ
max
Unit
Protection Functions
9
)
Initial peak short circuit current limit (pin 4 to 1
or 7)
T
j
=-40°C:
T
j
=25°C:
T
j
=+150°C:
Repetitive short circuit shutdown current limit
T
j
=
T
jt
(see timing diagrams, page 12)
Output clamp (inductive load switch off)
at
V
OUT
=
V
bb
-
V
ON(CL)
I
L
= 40 mA:
Thermal overload trip temperature
Thermal hysteresis
Reverse battery (pin 4 to 2)
10
)
Reverse battery voltage drop
(V
out
> V
bb
)
I
L
= -1.9 A, each channel
T
j
=150 °C:
Diagnostic Characteristics
Open load detection current
(included in standby current
I
bb(off)
)
I
L(SCp)
5.5
4.5
2.5
I
L(SCr)
--
V
ON(CL)
T
jt
T
jt
-V
bb
-V
ON(rev)
41
150
--
--
--
4
47
--
10
--
610
--
53
--
--
32
--
A
V
°C
K
V
mV
9.5
7.5
4.5
13
11
7
A
I
L(off)
T
j
=-40..150°C:
V
OUT(OL)
--
2
30
3
--
4
A
V
Open load detection voltage
9
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
10
)
Requires 150
resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 8).
)
Data Sheet
5
2013-10-11
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