UNISONIC TECHNOLOGIES CO., LTD
1N40A
Preliminary
Power MOSFET
1A, 400V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
1N40A
is an N-channel mode power MOSFET using
UTC’ s advanced technology to provide customers with planar stripe
and DMOS technology. This technology is specialized in allowing a
minimum on-state resistance and superior switching performance. It
also can withstand high energy pulse in the avalanche and
commutation mode.
The UTC
1N40A
is universally applied in electronic lamp ballast
based on half bridge topology and high efficient switched mode
power supply.
FEATURES
* High switching speed
* R
DS(ON)
< 6.8Ω @ V
GS
= 10V, I
D
= 0.5A
* 100% avalanche tested
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Package
SOT-223
TO-251
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tape Reel
Tube
Ordering Number
Lead Free
Halogen Free
-
1N40AG-AA3-R
1N40AL-TM3-T
1N40AG-TM3-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source
1N40AG-TA3-R
(1)Packing Type
(2)Package Type
(3)Green Package
(1) T: Tubel, R: Tape Reel
(2) AA3: SOT-223, TM3: TO-251
(3) L: Lead Free, G: Halogen Free and Lead Free
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 5
QW-R205-029.b
1N40A
MARKING
SOT-223
Preliminary
Power MOSFET
TO-251
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R205-029.b
1N40A
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
400
V
Gate-Source Voltage
V
GSS
±30
V
Continuous (T
C
=25°C)
I
D
1
A
Drain Current
Pulsed (Note 2)
I
DM
4
A
Avalanche Energy
Single Pulsed (Note 3)
E
AS
40
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
SOT-223
1
W
Power Dissipation
P
D
TO-251
25
W
SOT-223
125
W/°C
Derate above 25°C
P
D
TO-251
0.2
W/°C
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 80mH, I
AS
= 1A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
4. I
SD
≤
1.8A, di/dt
≤
200A/µs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
SYMBOL
θ
JA
θ
JC
RATINGS
150
110
125
5
UNIT
°C/W
°C/W
°C/W
°C/W
PARAMETER
SOT-223
Junction to Ambient
TO-251
SOT-223
Junction to Case
TO-251
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 5
QW-R205-029.b
1N40A
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise noted)
MIN TYP MAX UNIT
400
0.4
V
V/°C
1
µA
+100 nA
-100 nA
2.0
4.0
125
20
17
10
3.22
0.8
33
20
58
17
4.0
6.8
150
30
28
15
V
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA, V
GS
=0V
Breakdown Voltage Temperature
△
BV
DSS
/
△
T
J
Reference to 25°C, I
D
=250µA
Coefficient
Drain-Source Leakage Current
I
DSS
V
DS
=400V, V
GS
=0V
Forward
V
GS
=+30V, V
DS
=0V
Gate- Source Leakage Current
I
GSS
Reverse
V
GS
=-30V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=0.5A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
GS
=10V, V
DS
=50V, I
D
=1.3A
Gate to Source Charge
Q
GS
(Note 1, 2)
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=30V, I
D
=0.5A, R
G
=25Ω
(Note 1, 2)
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=1A, V
GS
=0V
Notes: 1. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
40
35
78
30
1.0
4.0
1.5
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 5
QW-R205-029.b
1N40A
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 5
QW-R205-029.b
京公网安备 11010802033920号
EEWORLD
