UNISONIC TECHNOLOGIES CO., LTD
UT30P03
P-CHANNEL
ENHANCEMENT MODE
FEATURES
1
Power MOSFET
* R
DS(ON)
< 40mΩ @ V
GS
=-10V, I
D
=-10A
R
DS(ON)
< 60mΩ @ V
GS
=-4.5V, I
D
=-10A
* Low Capacitance
* Optimized gate charge
* Fast switching capability
* Avalanche energy specified
TO-252
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
UT30P03L-TN3-T
UT30P03L-TN3-R
Halogen Free
UT30P03G-TN3-T
UT30P03G-TN3-R
Package
TO-252
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 3
QW-R502-335.C
UT30P03
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DS
-30
V
Gate-Source Voltage
V
GS
±20
V
Continuous Drain Current
I
D
-30
A
Power Dissipation
P
D
50
W
Junction Temperature
T
J
+175
°C
Storage Temperature
T
STG
-55 ~ +175
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied
THERMAL DATA
SYMBOL
θ
JA
θ
JC
RATINGS
50
3
UNIT
°C/W
°C/W
PARAMETER
Junction to Ambient
Junction to Case
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
MIN TYP MAX UNIT
-30
-1
±100
-1
30
40
700
130
120
25
50
380
180
100
15
10
-1.2
-30
-3
40
60
V
μA
nA
V
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V, I
D
=-250
μA
Drain-Source Leakage Current
I
DSS
V
DS
=-30V, V
GS
=0V
Gate-Source Leakage Current
I
GSS
V
GS
=±20V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=-250
μA
V
GS
=-10V, I
D
=-10A
Static Drain-Source On-State Resistance
R
DS(ON)
(Note)
V
GS
=-4.5V, I
D
=-10A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
=-25V, V
GS
=0V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
Turn-On Rise Time
t
R
V
DS
=-15V, I
D
=-1A, R
L
= 15Ω,
V
GS
=-10V, R
G
=3.3Ω
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
V
DS
= -24V, I
D
= -30A, V
GS
= -4.5V
Gate-Source Charge
Q
GS
Gate-Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0V, I
S
=-10A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Note: Pulse Test: Pulse width≤300μs, Duty cycle≤2%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R502-335.C
UT30P03
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
300
250
200
150
100
50
0
Power MOSFET
Drain Current vs. Gate Threshold Voltage
300
250
200
150
100
50
0
0
Drain Current, -I
D
(µA)
0
10
20
30
40
50
Drain Current, -I
D
(µA)
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6
Drain-Source Breakdown Voltage, -BV
DSS
(V)
Gate Threshold Voltage, -V
TH
(V)
Drain Current, -I
D
(A)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Drain Current, -I
S
(A)
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QW-R502-335.C
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