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UT2311G-AE3-R

Description
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size210KB,4 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Environmental Compliance
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UT2311G-AE3-R Overview

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

UT2311G-AE3-R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerUNISONIC TECHNOLOGIES CO.,LTD
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresULTRA-LOW RESISTANCE
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (ID)4 A
Maximum drain-source on-resistance0.055 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Maximum pulsed drain current (IDM)20 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
UNISONIC TECHNOLOGIES CO., LTD
UT2311
-4A, -20V P-CHANNEL
ENHANCEMENT MODE
MOSFET
FEATURES
Power MOSFET
* Extremely low on-resistance due to high density cell
* Perfect thermal performance and electrical capability with
advanced technology of trench process
SYMBOL
ORDERING INFORMATION
Ordering Number
Package
SOT-23
S: Source
Pin Assignment
1
2
3
S
G
D
Packing
Tape Reel
Note:
UT2311G-AE3-R
Pin Assignment: G: Gate
D: Drain
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 4
QW-R502-365.D

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