UNISONIC TECHNOLOGIES CO., LTD
UT2311
-4A, -20V P-CHANNEL
ENHANCEMENT MODE
MOSFET
FEATURES
Power MOSFET
* Extremely low on-resistance due to high density cell
* Perfect thermal performance and electrical capability with
advanced technology of trench process
SYMBOL
ORDERING INFORMATION
Ordering Number
Package
SOT-23
S: Source
Pin Assignment
1
2
3
S
G
D
Packing
Tape Reel
Note:
UT2311G-AE3-R
Pin Assignment: G: Gate
D: Drain
MARKING
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ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C, unless otherwise noted)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
-20
V
Gate-Source Voltage
V
GSS
±8
V
Continuous Drain Current
I
D
-4
A
Pulsed Drain Current
I
DM
-20
A
Power Dissipation (T
A
=25°C) (Note 2)
P
D
1.25
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Surface mounted on 1 in
2
copper pad of FR4 board.
THERMAL DATA
SYMBOL
θ
JA
RATINGS
100
UNIT
°C/W
PARAMETER
Junction to Ambient (PCB mounted)
Note: Surface Mounted on FR4 board t
≤
5 sec.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
TEST CONDITIONS
V
GS
=0V, I
D
=-250µA
V
DS
=-16V,V
GS
=0V
V
GS
=±8V, V
DS
=0V
V
DS
=V
GS
, I
D
=-250µA
V
GS
=-4.5V, I
D
=-4.0 A
V
GS
=-2.5V, I
D
=-2.5 A
V
DS
≥
-10V, V
GS
=-4.5V
MIN
-20
-1.0
±100
-0.45
45
75
-6
970
485
160
18
45
95
65
8.5
1.5
2.1
-0.8
55
85
TYP MAX UNIT
V
µA
nA
V
mΩ
mΩ
A
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
On-State Drain Current
I
D(ON)
b
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
V
DS
=-6V, V
GS
=0 V, f =1.0MHz
Reverse Transfer Capacitance
C
RSS
b
SWITCHING PARAMETERS
Turn-ON Delay Time
t
D(ON)
Turn-ON Rise Time
t
R
V
DD
=-4V, V
GEN
=-4.5V, I
D
=-1A
Turn-OFF Delay Time
t
D(OFF)
R
L
=4Ω, R
G
=6Ω
Turn-OFF Fall-Time
t
F
Total Gate Charge
Q
G
V
GS
=-4.5V, V
DS
=-6V, I
D
=-4.0A
Gate Source Charge
Q
GS
Gate Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
=0 V, I
S
=-1.6A,
Maximum Continuous Drain-Source
I
S
Diode Forward Current
Note: Pulse test; pulse width
≤
300μs, duty cycle
≤
2%.
12
-1.2
-1.6
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UT2311
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Switching Test Circuit
Switching Waveforms
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Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
300
250
200
150
100
50
0
Drain Current vs. Gate Threshold Voltage
300
250
200
150
100
50
0
Drain Current, -I
D
(µA)
0
5
10
15
20
25
30
35
Drain Current, -I
D
(µA)
0
0.1
0.2
0.3
0.4
0.5
0.6
Drain-Source Breakdown Voltage, -BV
DSS
(V)
Gate Threshold Voltage, -V
TH
(V)
Drain Current, -I
D
(A)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Drain Current, -I
D
(A)
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