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BUK7907-55ATE_15

Description
N-channel TrenchPLUS standard level FET
File Size217KB,15 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
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BUK7907-55ATE_15 Overview

N-channel TrenchPLUS standard level FET

BUK7907-55ATE
N-channel TrenchPLUS standard level FET
Rev. 03 — 9 February 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS diodes for
ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been
designed and qualified to the appropriate AEC standard for use in automotive critical
applications.
1.2 Features and benefits
Allows responsive temperature
monitoring due to integrated
temperature sensor
Q101 compliant
Electrostatically robust due to
integrated protection diodes
Low conduction losses due to low
on-state resistance
1.3 Applications
12 V and 24 V high power motor
drives
Automotive and general purpose
power switching
Electrical Power Assisted Steering
(EPAS)
Protected drive for lamps
1.4 Quick reference data
Table 1.
V
DS
I
D
P
tot
T
j
R
DSon
Quick reference
Conditions
T
j
25 °C; T
j
175 °C
V
GS
= 10 V; T
mb
= 25 °C; see
Figure 2;
see
Figure 3
T
mb
= 25 °C; see
Figure 1
V
GS
= 10 V; I
D
= 50 A; T
j
= 175 °C; see
Figure 7;
see
Figure 8
V
GS
= 10 V; I
D
= 50 A; T
j
= 25 °C; see
Figure 7;
see
Figure 8
S
F(TSD)
V
F(TSD)
temperature sense diode I
F
= 250 µA; T
j
> -55 °C; T
j
< 175 °C
temperature coefficient
temperature sense diode I
F
= 250 µA; T
j
= 25 °C
forward voltage
[1]
Current is limited by power dissipation chip rating.
Symbol Parameter
drain-source voltage
drain current
total power dissipation
junction temperature
drain-source on-state
resistance
Min
-
[1]
-
-
-55
-
-
-1.4
648
Typ
-
-
-
-
-
5.8
Max
55
140
272
175
14
7
Unit
V
A
W
°C
mΩ
mΩ
-1.54 -1.68 mV/K
658
668
mV
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