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BUK9230-100B_15

Description
N-channel TrenchMOS logic level FET
File Size178KB,14 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
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BUK9230-100B_15 Overview

N-channel TrenchMOS logic level FET

DP
AK
BUK9230-100B
N-channel TrenchMOS logic level FET
Rev. 02 — 1 February 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 185 °C rating
1.3 Applications
12 V, 24 V and 42 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
Quick reference data
Parameter
drain-source voltage
drain current
total power
dissipation
Conditions
T
j
25 °C; T
j
185 °C
V
GS
= 5 V; T
mb
= 25 °C;
see
Figure 1;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
Min
-
-
-
Typ
-
-
-
Max Unit
100
47
167
V
A
W
Static characteristics
R
DSon
drain-source on-state V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C
resistance
V
GS
= 5 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 9;
see
Figure 13
non-repetitive
drain-source
avalanche energy
gate-drain charge
I
D
= 47 A; V
sup
100 V;
R
GS
= 50
Ω;
V
GS
= 5 V;
T
j(init)
= 25 °C; unclamped
V
GS
= 5 V; I
D
= 25 A; V
DS
= 80 V;
T
j
= 25 °C; see
Figure 10
-
-
24
25
28
30
mΩ
mΩ
Avalanche ruggedness
E
DS(AL)S
-
-
150
mJ
Dynamic characteristics
Q
GD
-
13
-
nC
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