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BUK9275-100A_15

Description
N-channel TrenchMOS logic level FET
File Size153KB,13 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
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BUK9275-100A_15 Overview

N-channel TrenchMOS logic level FET

BUK9275-100A
N-channel TrenchMOS logic level FET
Rev. 03 — 15 June 2010
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads
Automotive and general purpose
power switching
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
Conditions
T
j
25 °C; T
j
175 °C
V
GS
= 5 V; T
mb
= 25 °C;
see
Figure 1;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
Min
-
-
-
Typ
-
-
-
Max Unit
100
V
21.7 A
88
W
Static characteristics
R
DSon
V
GS
= 4.5 V; I
D
= 10 A;
T
j
= 25 °C
V
GS
= 10 V; I
D
= 10 A;
T
j
= 25 °C
V
GS
= 5 V; I
D
= 10 A;
T
j
= 25 °C;
see
Figure 12;
see
Figure 13
Avalanche ruggedness
E
DS(AL)S
non-repetitive
I
D
= 14 A; V
sup
100 V;
drain-source
R
GS
= 50
Ω;
V
GS
= 5 V;
avalanche energy T
j(init)
= 25 °C; unclamped
-
-
100
mJ
-
-
-
-
62
64
84
72
75
mΩ
mΩ
mΩ
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