UNISONIC TECHNOLOGIES CO., LTD
DTA114T
DIGITAL TRANSISTORS
(BUILT- IN BIAS RESISTORS)
FEATURES
PNP SILICON TRANSISTOR
* Built-in bias resistors that implies easy ON/OFF applications.
* The bias resistors are thin-film resistors with complete isolation to
allow positive input.
EQUIVALENT CIRCUIT
C
B
R1
E
ORDERING INFORMATION
Order Number
Package
Pin Assignment
1
2
3
E
B
C
E
B
C
E
B
C
E
C
B
E
C
B
E
C
B
Packing
Tape Reel
Tape Reel
Tape Reel
Tape Box
Bulk
Bulk
Lead Free
Halogen Free
-
DTA114TG-AE3-R
SOT-23
-
DTA114TG-AL3-R
SOT-323
-
DTA114TG-AN3-R
SOT-523
DTA114TL-T92-B
DTA114TG-T92-B
TO-92
DTA114TL-T92-K
DTA114TG-T92-K
TO-92
DTA114TL-T9S-K
DTA114TG-T9S-K
TO-92SP
Note: Pin assignment: E: Emitter
B: Base
C: Collector
MARKING
SOT-23 / SOT-323 / SOT-523
TO-92 / TO-92SP
AB4T
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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QW-R206-061.D
DTA114T
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-50
V
Collector-Emitter Voltage
V
CEO
-50
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-100
mA
SOT-23
200
SOT-323/SOT-523
150
Collector Power Dissipation
P
C
mW
TO-92
625
TO-92SP
550
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C, unless otherwise specified)
TYP MAX UNIT
V
V
V
V
μA
μA
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV
CBO
I
C
=-50μA
-50
Collector-Emitter Breakdown Voltage
BV
CEO
I
C
=-1mA
-50
Emitter-Base Breakdown Voltage
BV
EBO
I
E
=-50μA
-5
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
=-10mA, I
B
=-1mA
Collector Cutoff Current
I
CBO
V
CB
=-50V
Emitter Cutoff Current
I
EBO
V
EB
=-4V
ON CHARACTERISTICS
DC Current Gain
h
FE
V
CE
=-5V, I
C
=-1mA
100
SMALL SIGNAL CHARACTERISTICS
Input Resistance
R
1
7
Transition Frequency
f
T
V
CE
=-10V, I
E
=5mA,f=100MHz (Note)
Note: Transition frequency of the device
-0.3
-0.5
-0.5
250
10
250
600
13
kΩ
MHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-061.D
DTA114T
■
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
U TC assum es no responsibility for equipm ent failures that result from using products at v alues that
ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or
other param eters) listed in products specifications of any and all UT C products described or contained
herein. UT C products are not designed for use in life support appliances, dev ices or system s where
m alfunction of these products can be reasonably expected to result in personal injury. R eproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation
presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate
and reliable and m ay be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Collector Saturation Voltage, V
CE(SAT)
(mV)
DC Current Gain, h
FE
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QW-R206-061.D
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