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BUK6226-75C_15

Description
N-channel TrenchMOS FET
File Size186KB,14 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
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BUK6226-75C_15 Overview

N-channel TrenchMOS FET

BUK6226-75C
N-channel TrenchMOS FET
Rev. 01 — 4 October 2010
Product data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Suitable for standard and logic level
gate drive sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V and 24 V Automotive systems
Electric and electro-hydraulic power
steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
non-repetitive
drain-source avalanche
energy
gate-drain charge
Conditions
T
j
25 °C; T
j
175 °C
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 1
T
mb
= 25 °C; see
Figure 2
V
GS
= 10 V; I
D
= 12 A;
T
j
= 25 °C; see
Figure 11
I
D
= 33 A; V
sup
75 V;
R
GS
= 50
Ω;
V
GS
= 10 V;
T
j(init)
= 25 °C; unclamped
I
D
= 25 A; V
DS
= 60 V;
V
GS
= 10 V; see
Figure 13;
see
Figure 14
Min
-
-
-
-
Typ
-
-
-
Max Unit
75
33
80
V
A
W
mΩ
Static characteristics
24.5 29
Avalanche ruggedness
E
DS(AL)S
-
-
42
mJ
Dynamic characteristics
Q
GD
-
9.4
-
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