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BUK9Y40-55B_15

Description
N-channel TrenchMOS logic level FET
File Size178KB,12 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
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BUK9Y40-55B_15 Overview

N-channel TrenchMOS logic level FET

BUK9Y40-55B
N-channel TrenchMOS logic level FET
Rev. 03 — 22 February 2008
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features
175
°C
rated
Q101 compliant
Logic level compatible
Very low on-state resistance
1.3 Applications
12 V and 24 V loads
General purpose power switching
Automotive systems
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
I
D
P
tot
R
DSon
Quick reference
Conditions
V
GS
= 5 V; T
mb
= 25
°C;
see
Figure 1
and
4
T
mb
= 25
°C;
see
Figure 2
V
GS
= 5 V; I
D
= 15 A;
T
j
= 25
°C;
see
Figure 12
and
13
Min
-
-
-
Typ
-
-
34
Max
26
59
40
Unit
A
W
drain current
total power dissipation
drain-source on-state
resistance
Symbol Parameter
Static characteristics
Avalanche ruggedness
E
DS(AL)S
non-repetitive
I
D
= 26 A; V
sup
55 V;
drain-source avalanche R
GS
= 50
Ω;
V
GS
= 5 V;
energy
T
j(init)
= 25
°C;
unclamped
-
-
36
mJ
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