BQ4024MA-85 datasheet, PDF - EEWORLD Datasheet

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BQ4024MA-85: DescriptionNon-Volatile SRAM, 128KX16, 85ns, CMOS, PDIP40,; Categorystorage storage; File Size341KB，9 Pages; ManufacturerBenchmarq Microelectronics Inc

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BQ4024MA-85 Overview

Non-Volatile SRAM, 128KX16, 85ns, CMOS, PDIP40,

BQ4024MA-85 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Benchmarq Microelectronics Inc
Reach Compliance Code	unknown
Maximum access time	85 ns
Other features	10 YEARS DATA RETENTION
JESD-30 code	R-PDIP-P40
JESD-609 code	e0
memory density	2097152 bit
Memory IC Type	NON-VOLATILE SRAM
memory width	16
Number of functions	1
Number of terminals	40
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	128KX16
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Encapsulate equivalent code	DIP40,.6
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.005 A
Maximum slew rate	0.2 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.75 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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BQ4024MA-85 Related Products

	BQ4024MA-85	BQ4024MA-120	BQ4024YMA-120	BQ4024YMA-85
Description	Non-Volatile SRAM, 128KX16, 85ns, CMOS, PDIP40,	Non-Volatile SRAM, 128KX16, 120ns, CMOS, PDIP40,	Non-Volatile SRAM, 128KX16, 120ns, CMOS, PDIP40,	Non-Volatile SRAM, 128KX16, 85ns, CMOS, PDIP40,
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Maker	Benchmarq Microelectronics Inc	Benchmarq Microelectronics Inc	Benchmarq Microelectronics Inc	Benchmarq Microelectronics Inc
Reach Compliance Code	unknown	unknown	unknown	unknown
Maximum access time	85 ns	120 ns	120 ns	85 ns
Other features	10 YEARS DATA RETENTION	10 YEARS DATA RETENTION	10 YEARS DATA RETENTION	10 YEARS DATA RETENTION
JESD-30 code	R-PDIP-P40	R-PDIP-P40	R-PDIP-P40	R-PDIP-P40
JESD-609 code	e0	e0	e0	e0
memory density	2097152 bit	2097152 bit	2097152 bit	2097152 bit
Memory IC Type	NON-VOLATILE SRAM	NON-VOLATILE SRAM	NON-VOLATILE SRAM	NON-VOLATILE SRAM
memory width	16	16	16	16
Number of functions	1	1	1	1
Number of terminals	40	40	40	40
word count	131072 words	131072 words	131072 words	131072 words
character code	128000	128000	128000	128000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C
organize	128KX16	128KX16	128KX16	128KX16
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	DIP	DIP	DIP	DIP
Encapsulate equivalent code	DIP40,.6	DIP40,.6	DIP40,.6	DIP40,.6
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE	IN-LINE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum standby current	0.005 A	0.005 A	0.005 A	0.005 A
Maximum slew rate	0.2 mA	0.2 mA	0.2 mA	0.2 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.75 V	4.75 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V
surface mount	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG
Terminal pitch	2.54 mm	2.54 mm	2.54 mm	2.54 mm
Terminal location	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED

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