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BAT114-099R

Description
Mixer Diode, High Barrier, Silicon, SOT-143, 4 PIN
CategoryDiscrete semiconductor    diode   
File Size47KB,3 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

BAT114-099R Overview

Mixer Diode, High Barrier, Silicon, SOT-143, 4 PIN

BAT114-099R Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInfineon
Parts packaging codeSOT-143
package instructionSOT-143, 4 PIN
Contacts4
Reach Compliance Codenot_compliant
ECCN codeEAR99
ConfigurationCROSSOVER RING, 4 ELEMENTS
Diode component materialsSILICON
Diode typeMIXER DIODE
JESD-30 codeR-PDSO-G4
JESD-609 codee0
Number of components4
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.1 W
Certification statusNot Qualified
surface mountYES
technologySCHOTTKY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Schottky barrier typeHIGH BARRIER

BAT114-099R Preview

Silicon Crossover Ring Quad Schottky Diode
BAT 114-099R
Features
• High barrier diode for double balanced mixers,
phase detectors and modulators
ESD: ElectroStatic Discharge
sensitive device, observe handling precautions!
Type
BAT 114-099R
Marking
14s
Ordering Code
(taped)
Q62702-A1006
Pin Configuration
Package
1)
SOT-143
1)
Dimensions see chapter
Package Outlines
Maximum Ratings
(per diode)
Parameter
Forward current
Operation temperature
Storage temperature
Power dissipation,
T
S
70
°C
Symbol
Limit Values
90
55 to + 150
55 to + 150
100
Unit
mA
°C
°C
mW
I
F
T
op
T
stg
P
tot
Semiconductor Group
1
02.96
BAT 114-099R
Thermal Resistance
(per diode)
Parameter
Junction to soldering point
Junction to ambient
1)
1)
Symbol
Limit Values
780
1020
Unit
K/W
K/W
R
thJS
R
thJA
Mounted on alumina 15 mm
×
16.7 mm to 0.7 mm
Electrical Characteristics
(per diode;
T
A
= 25
°C)
Parameter
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
Forward voltage matching
1)
I
F
= 10 mA
Diode capacitance
V
R
= 0 V,
f
= 1 MHz
Forward resistance
I
F
= 10 mA / 50 mA
1)
Symbol
Limit Values
min. typ.
max.
Unit
V
V
F
V
F
0.58
0.68
0.25
5.5
0.7
0.78
mV
20
pF
C
T
R
F
V
F
is difference between lowest and highest
V
F
in component.
Semiconductor Group
2
BAT 114-099R
Forward Current
I
F
=
f
(
V
F
)
Semiconductor Group
3
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