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BSB280N15NZ3G

Description
9 A, 150 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size1MB,13 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

BSB280N15NZ3G Overview

9 A, 150 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET

BSB280N15NZ3G Parametric

Parameter NameAttribute value
Number of terminals3
Minimum breakdown voltage150 V
Processing package descriptionGREEN, METAL, WDSON-2, 3 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeCHIP CARRIER
surface mountYes
Terminal formNO LEAD
terminal coatingNOT SPECIFIED
Terminal locationBOTTOM
Packaging MaterialsMETAL
structureSINGLE WITH BUILT-IN DIODE
Shell connectionDRAIN
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Channel typeN-CHANNEL
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeGENERAL PURPOSE POWER
Maximum leakage current9 A
Rated avalanche energy120 mJ
Maximum drain on-resistance0.0280 ohm
Maximum leakage current pulse120 A
n-Channel Power MOSFET
OptiMOS™
BSB280N15NZ3 G
Data Sheet
2.3, 2011-03-01
Final
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