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BZV55B4V7-L0L1G

Description
Zener Diode
CategoryDiscrete semiconductor    diode   
File Size453KB,5 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

BZV55B4V7-L0L1G Overview

Zener Diode

BZV55B4V7-L0L1G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
Reach Compliance Codecompliant
ECCN codeEAR99
Diode typeZENER DIODE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED
BZV55B2V4 ~ BZV55B75
Taiwan Semiconductor
Small Signal Product
500mW, 2% Tolerance Zener Diode
FEATURES
- Wide zener voltage range selection : 2.4V to 75V
- VZ Tolerance Selection of ±2%
- Hermetically sealed glasss
- Pb free and RoHS compliant
- High reliability glass passivation insuring parameter
stability and protection against junction contamination
Mini-MELF (LL34)
Hermetically Sealed Glass
MECHANICAL DATA
- Case: Mini-MELF Package (JEDEC DO-213AC)
- High temperature soldering guaranteed: 270
o
C/10s
- Polarity: Indicated by cathode band
- Weight : 31 mg (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Power Dissipation
Forward Voltage
Thermal Resistance (Junction to Ambient)
Storage Temperature Range
Note1 : Valid provided that electrodes are kept at ambient temperature
I
F
= 100 mA
(Note 1)
SYMBOL
P
D
V
F
R
θJA
T
J
, T
STG
VALUE
500
1
300
- 65 to + 175
UNIT
mW
V
o
C/W
o
C
Zener I vs. V Characteristics
V
BR
I
ZK
Z
ZK
I
ZT
V
Z
Z
ZT
I
ZM
V
ZM
: Voltage at I
ZK
: Test current for voltage V
BR
: Dynamic impedance at I
ZK
: Test current for voltage V
Z
: Voltage at current I
: Dynamic impedance at I
ZT
: Maximum steady state current
: Voltage at I
ZM
Document Number: DS_S1403001
Version: E14
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