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BLL6H1214P2S-250_15

Description
LDMOS L-band radar power module
File Size117KB,10 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet View All

BLL6H1214P2S-250_15 Overview

LDMOS L-band radar power module

BLL6H1214P2S-250
LDMOS L-band radar power module
Rev. 1 — 12 August 2014
Product data sheet
1. Product profile
1.1 General description
250 W LDMOS power module intended for L-band radar applications in the frequency
range from 1.2 GHz to 1.4 GHz.
Table 1.
Test information
Typical RF performance at T
case
= 25
C; t
p
= 1.8 ms;
= 30 %; I
Dq
= 200 mA; P
i
= 26 dBm; in a
class-AB production test circuit.
Test signal
pulsed RF
f
(MHz)
1195 to 1405
V
DS
(V)
45
P
L
(W)
190 to 290
G
p
(dB)
27
add
(%)
48
t
r
(ns)
15
t
f
(ns)
5
1.2 Features and benefits
Input/output 50
matched
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1.2 GHz to 1.4 GHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
L-band radar applications in the frequency range 1.2 GHz to 1.4 GHz
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