BS170F datasheet, PDF - EEWORLD Datasheet

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BS170F: DescriptionSmall Signal Field-Effect Transistor, 0.00015A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size23KB，1 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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BS170F Overview

Small Signal Field-Effect Transistor, 0.00015A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

BS170F Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Zetex Semiconductors
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (Abs) (ID)	0.15 A
Maximum drain current (ID)	0.00015 A
Maximum drain-source on-resistance	5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.25 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

BS170F Preview

SOT23 N-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 3 - JANUARY 1996

FEATURES

* 60Volt V

* R

DS(ON)

= 5Ω

BS170F

PARTMARKING DETAIL – MV

SOT23

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Drain-Source Voltage

Continuous Drain Current at T

amb

=25°C

Pulsed Drain Current

Gate Source Voltage

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

tot

stg

VALUE

0.15

330

-55 to +150

UNIT

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Drain-Source

Breakdown Voltage

Gate-Source Threshold

Voltage

Gate-Body Leakage

Zero Gate Voltage Drain

Current

Static Drain-Source On-State

Resistance (1)

Forward Transconductance

(1)(2)

Input Capacitance (2)

Turn-On Delay Time (2)(3)

Turn-Off Delay Time (2)(3)

SYMBOL

DSS

GS(th)

GSS

DSS

DS(on)

iss

d(on)

d(off)

200

MIN. TYP. MAX. UNIT CONDITIONS.

0.8

0.5

µA

Ω

=100µA, V

=0V

=1mA, V

= V

=15V, V

=0V

=25V, V

=0V

=10V, I

=200mA

=10V, I

=200mA

=10V, V

=0V,

f=1MHz

≈-15V,

=600mA

(1) Measured under pulsed conditions. Width=300µs. Duty cycle

≤2%

(2) Sample test.

(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator

Spice parameter data is available upon request for this device

For typical characteristics graphs refer to ZVN3306F datasheet.

3 - 54

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