PD - 95637A
IRG4IBC30SPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Standard: Optimized for minimum saturation
voltage and low operating freqencies (<1 kHz)
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
• Industry standard TO-220 Full-Pak
• Lead-Free
C
V
CES
= 600V
G
E
V
CE(on) typ.
= 1.4V
@V
GE
= 15V, I
C
= 18A
N-channel
Benefits
• Generation 4 IGBTs offer highest efficiencies available
• IGBTs optimized for specific application conditions
• Designed to be a "drop-in" replacement for equivalent
industry -standard Generation 3 IR IGBTs
TO-220 Full-Pak
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
600
23.5
13.0
47
47
± 20
10
45
18
-55 to + 150
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
mJ
W
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
Wt
Junction-to-Case
Junction-to-Ambient, typical socket mount
Weight
Typ.
–––
–––
2.1 (0.075)
Max.
2.8
65
–––
Units
°C/W
g (oz)
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1
06/17/2010
IRG4IBC30SPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)CES
V
(BR)ECS
∆V
(BR)CES
/∆T
J
V
CE(ON)
V
GE(th)
∆V
GE(th)
/∆T
J
g
fe
I
CES
I
GES
Parameter
Min. Typ. Max. Units
Conditions
Collector-to-Emitter Breakdown Voltage
600
—
—
V
V
GE
= 0V, I
C
= 250µA
Emitter-to-Collector Breakdown Voltage
18
—
—
V
V
GE
= 0V, I
C
= 1.0A
Temperature Coeff. of Breakdown Voltage — 0.75 —
V/°C V
GE
= 0V, I
C
= 1.0mA
— 1.40 1.6
I
C
= 18A
V
GE
= 15V
Collector-to-Emitter Saturation Voltage
— 1.84 —
I
C
= 34A
See Fig.2, 5
V
— 1.45 —
I
C
= 18A , T
J
= 150°C
Gate Threshold Voltage
3.0
—
6.0
V
CE
= V
GE
, I
C
= 250µA
Temperature Coeff. of Threshold Voltage
—
-11
— mV/°C V
CE
= V
GE
, I
C
= 250µA
Forward Transconductance
6.0
11
—
S
V
CE
= 100 V, I
C
= 18A
—
—
250
V
GE
= 0V, V
CE
= 600V
Zero Gate Voltage Collector Current
µA
—
—
2.0
V
GE
= 0V, V
CE
= 10V, T
J
= 25°C
—
— 1000
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
Gate-to-Emitter Leakage Current
—
— ±100
nA V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max. Units
Conditions
50
75
I
C
= 18A
7.3
11
nC
V
CC
= 400V
See Fig.8
17
26
V
GE
= 15V
22
—
18
—
T
J
= 25°C
ns
540 810
I
C
= 18A, V
CC
= 480V
390 590
V
GE
= 15V, R
G
= 23Ω
0.26 —
Energy losses include "tail"
3.45 —
mJ See Fig. 9, 10, 14
3.71 5.6
21
—
T
J
= 150°C,
19
—
I
C
= 18A, V
CC
= 480V
ns
790
—
V
GE
= 15V, R
G
= 23Ω
760
—
Energy losses include "tail"
6.55 —
mJ See Fig. 10, 11, 14
7.5
—
nH
Measured 5mm from package
1100 —
V
GE
= 0V
72
—
pF
V
CC
= 30V
See Fig. 7
19
—
ƒ = 1.0MHz
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. (See Fig. 13b)
Pulse width
≤
80µs; duty factor
≤
0.1%.
Pulse width 5.0µs, single shot.
V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10µH, R
G
= 23Ω,
(See Fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4IBC30SPbF
20
Square wave:
60% of rated
voltage
15
Load Current ( A )
I
For both:
Duty
cycle 50%
Duty
cycle:
:
50%
TJ = 125°C
Tj = 125°C
Tsink
Tsink
= 90°C
Gate drive as specified
drive as specified
Power
Dissipation
5.8
W
Power
Dissipation =
= 7.0W
Triangular wave:
I
For both:
10
Ideal diodes
5
Clamp voltage:
80% of rated
0
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
100
100
I
C
, Collector-to-Emitter Current (A)
T
J
= 25
o
C
T
J
= 150
o
C
I
C
, Collector-to-Emitter Current (A)
T
J
= 150
o
C
10
10
T
J
= 25
o
C
1
1
V
GE
= 15V
20µs PULSE WIDTH
1
10
0.1
V
CC
= 50V
5µs PULSE WIDTH
5
6
7
8
9
10
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
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3
IRG4IBC30SPbF
24
3.0
20
V
CE
, Collector-to-Emitter Voltage(V)
V GE = 15V
V
GE
= 15V
80 us PULSE WIDTH
I
C
= 36 A
Maximum DC Collector Current (A)
2.5
16
12
2.0
8
I
C
= 18 A
1.5
4
I
C
=
1.0
-60 -40 -20
0
20
40
60
9A
0
25
50
75
100
125
150
80 100 120 140 160
TJ , Junction Temperature (°C)
T
J
, Junction Temperature (
°
C)
Fig. 4
- Maximum Collector Current vs. Case
Temperature
Fig. 5
- Typical Collector-to-Emitter Voltage
vs. Junction Temperature
10
Thermal Response (Z
thJC
)
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.1
1
10
P
DM
t
1
t
2
0.01
0.00001
0.0001
0.001
t
1
, Rectangular Pulse Duration (sec)
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4IBC30SPbF
2000
V
GE
, Gate-to-Emitter Voltage (V)
100
V
GE
= 0V,
f = 1MHz
C
ies
= C
ge
+ C
gc ,
C
ce
SHORTED
C
res
= C
gc
C
oes
= C
ce
+ C
gc
20
V
CC
= 400V
I
C
= 18A
C, Capacitance (pF)
1500
16
Cies
1000
12
8
500
Coes
Cres
4
0
1
10
0
0
10
20
30
40
50
60
V
CE
, Collector-to-Emitter Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig.
8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
3.80
Total Switching Losses (mJ)
Total Switching Losses (mJ)
V
CC
= 480V
V
GE
= 15V
T
J
= 25
°
C
3.76
I
C
= 18A
100
R
G
= 23Ohm
Ω
V
GE
= 15V
V
CC
= 480V
I
C
=
36
A
10
3.72
I
C
=
18
A
I
C
=
9.0
A
9
A
3.68
1
3.64
10
3.60
0
10
20
30
40
R
G
,
Gate
Resistance
(Ω)
Gate
Resistance (Ohm)
R ,
50
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
G
T
J
, Junction Temperature (
°
C )
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
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