StrongIRFET™
IRFS7762PbF
IRFSL7762PbF
Application
Brushed motor drive applications
BLDC motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC inverters
HEXFET
®
Power MOSFET
D
V
DSS
R
DS(on)
typ.
75V
5.6m
6.7m
85A
G
S
max
I
D
D
D
Benefits
Improved gate, avalanche and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and dI/dt capability
Lead-free, RoHS compliant
G
Gate
S
G
D2Pak
IRFS7762PbF
G
S
D
TO-262
IRFSL7762PbF
D
Drain
S
Source
Base part number
IRFSL7762PbF
IRFS7762PbF
Package Type
TO-262
D
2
-Pak
Standard Pack
Form
Quantity
Tube
Tube
Tape and Reel Left
50
50
800
Orderable Part Number
IRFSL7762PbF
IRFS7762PbF
IRFS7762TRLPbF
RDS(on), Drain-to -Source On Resistance (m
)
18
ID = 51A
16
100
80
ID, Drain Current (A)
14
12
10
8
6
4
4
6
8
10
12
14
16
18
20
T J = 25°C
T J = 125°C
60
40
20
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Fig 2.
Maximum Drain Current vs. Case Temperature
1
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Absolute Maximum Rating
IRFS/SL7762PbF
Units
A
W
W/°C
V
°C
Parameter
Max.
Continuous Drain Current, V
GS
@ 10V
85
Continuous Drain Current, V
GS
@ 10V
60
Pulsed Drain Current
335
Maximum Power Dissipation
140
Linear Derating Factor
0.95
V
GS
Gate-to-Source Voltage
± 20
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Avalanche Characteristics
Symbol
Max.
Parameter
E
AS (Thermally limited)
160
Single Pulse Avalanche Energy
E
AS (Thermally limited)
243
Single Pulse Avalanche Energy
I
AR
Avalanche Current
See Fig 15, 16, 23a, 23b
Repetitive Avalanche Energy
E
AR
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Junction-to-Case
R
JC
–––
1.05
Junction-to-Ambient (PCB Mount)
R
JA
–––
40
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
I
DSS
I
GSS
R
G
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
Min.
75
–––
–––
–––
2.1
–––
–––
–––
–––
–––
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Units
mJ
A
mJ
Units
°C/W
Typ. Max. Units
Conditions
––– –––
V
V
GS
= 0V, I
D
= 250µA
58
––– mV/°C Reference to 25°C, I
D
= 1mA
5.6
6.7
V
GS
= 10V, I
D
= 51A
m
6.6
–––
V
GS
= 6.0V, I
D
= 26A
–––
3.7
V
V
DS
= V
GS
, I
D
= 100µA
–––
1.0
V
DS
= 75V, V
GS
= 0V
µA
––– 150
V
DS
= 75V,V
GS
= 0V,T
J
= 125°C
––– 100
V
GS
= 20V
nA
––– -100
V
GS
= -20V
2.5
–––
Notes:
Repetitive
rating; pulse width limited by max. junction temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 120µH, R
G
= 50, I
AS
= 51A, V
GS
=10V.
I
SD
51A, di/dt
735A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse
width
400µs; duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
is measured at T
J
approximately 90°C.
Limited by T
Jmax
, starting T
J
= 25°C, L = 1mH, R
G
= 50, I
AS
= 22A, V
GS
=10V.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994:
http://www.irf.com/technical-info/appnotes/an-994.pdf
2
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© 2015 International Rectifier
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February 19, 2015
IRFS/SL7762PbF
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg – Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Min.
180
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
85
21
26
60
11
49
57
40
4440
370
230
330
430
Typ.
–––
–––
–––
13
34
46
54
69
2.7
Max. Units
–––
130
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Max. Units
85
A
335
1.2
–––
–––
–––
–––
–––
–––
V
S
Conditions
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
V
DS
= 10V, I
D
= 51A
I
D
= 51A
V
DS
= 38V
nC
V
GS
= 10V
V
DD
= 38V
I
D
= 51A
R
G
= 2.7
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig.7
V
GS
= 0V, V
DS
= 0V to 60V
V
GS
= 0V, V
DS
= 0V to 60V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
ns
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
C
oss eff.(ER)
(Energy Related)
C
oss eff.(TR)
Output Capacitance (Time Related)
Diode Characteristics
Symbol
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
dv/dt
t
rr
Q
rr
I
RRM
Diode Forward Voltage
Peak Diode Recovery dv/dt
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
pF
D
G
S
T
J
= 25°C,I
S
= 51A,V
GS
= 0V
V/ns T
J
= 175°C,I
S
= 51A,V
DS
= 75V
T
J
= 25°C
V
DD
= 64V
ns
T
J
= 125°C
I
F
= 51A,
T
J
= 25°C di/dt = 100A/µs
nC
T
J
= 125°C
A T
J
= 25°C
3
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February 19, 2015
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
IRFS/SL7762PbF
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
4.5V
10
4.5V
10
60µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
60µs PULSE WIDTH
Tj = 175°C
1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 3.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 4.
Typical Output Characteristics
3.0
ID = 51A
V GS = 10V
ID, Drain-to-Source Current (A)
100
TJ = 175°C
10
TJ = 25°C
1
V DS = 25V
60µs PULSE WIDTH
2.5
2.0
1.5
1.0
0.1
2.0
3.0
4.0
5.0
6.0
7.0
V GS, Gate-to-Source Voltage (V)
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 5.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
Fig 6.
Normalized On-Resistance vs. Temperature
14.0
ID= 51A
V GS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
V DS= 60V
V DS= 38V
V DS= 15V
C, Capacitance (pF)
10000
Ciss
1000
Coss
Crss
100
1
10
V DS, Drain-to-Source Voltage (V)
100
0
20
40
60
80
100
120
QG, Total Gate Charge (nC)
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
4
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Fig 8.
Typical Gate Charge vs.
Gate-to-Source Voltage
Submit Datasheet Feedback
February 19, 2015
1000
IRFS/SL7762PbF
1msec
100µsec
100
TJ = 175°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
10
TJ = 25°C
OPERATION
IN THIS
AREA
LIMITED BY
RDS(on)
Tc = 25°C
Tj = 175°C
Single Pulse
1
10msec
V GS = 0V
1.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V SD, Source-to-Drain Voltage (V)
DC
0.1
0.1
1
10
VDS, Drain-toSource Voltage (V)
Fig 9.
Typical Source-Drain Diode Forward Voltage
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 10.
Maximum Safe Operating Area
0.9
95
Id = 1.0mA
0.8
0.7
0.6
Energy (µJ)
90
0.5
0.4
0.3
85
80
0.2
0.1
75
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Temperature ( °C )
0.0
-10
0
10
20
30
40
50
60
70
80
VDS, Drain-to-Source Voltage (V)
Fig 11.
Drain-to-Source Breakdown Voltage
RDS(on), Drain-to -Source On Resistance (
m)
Fig 12.
Typical C
oss
Stored Energy
18.0
16.0
14.0
12.0
10.0
8.0
6.0
4.0
0
20 40 60 80 100 120 140 160 180 200
ID, Drain Current (A)
Vgs = 5.5V
Vgs = 6.0V
Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
Fig 13.
Typical On-Resistance vs. Drain Current
5
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February 19, 2015
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