SEMICONDUCTOR
TECHNICAL DATA
General Description
KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency
and short circuit ruggedness.
It is designed for applications such as motor control, uninterrupted power
supplies(UPS), general inverters.
FEATURES
・High
speed switching
・High
ruggedness, temperature stable behavior
・Short
Circuit Withstand Times
≻10us
・Extremely
enhanced avalanche capability
KGF30N60KDA
MAXIMUM RATING
(Ta=25℃)
CHARACTERISTIC
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current @Tc=25
℃
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Junction Temperature
Storage Temperature Range
@Tc=25
℃
@Tc=100
℃
@Tc=25
℃
@Tc=100
℃
SYMBOL
V
CES
V
GES
I
C
30
I
CM
*
I
F
I
FM
*
P
D
71
T
j
T
stg
150
-55 to + 150
W
℃
℃
90
30
90
178
A
A
A
A
W
RATING
600
±20
60
UNIT
V
V
A
*Repetitive rating : Pulse width limited by max. junction temperature
THERMAL CHARACTERISTIC
CHARACTERISTIC
Thermal Resistance, Junction to Case (IGBT)
Thermal Resistance, Junction to Case (DIODE)
Thermal Resistance, Junction to Ambient
SYMBOL
R
t h JC
R
t h JC
R
t h JA
MAX.
0.7
1.55
40
UNIT
℃/W
℃/W
℃/W
G
E
C
2013. 11. 25
Revision No : 1
1/8
KGF30N60KDA
ELECTRICAL CHARACTERISTICS
(Ta=25℃)
CHARACTERISTIC
Static
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Gate Leakage Current
Gate Threshold Voltage
BV
CES
I
CES
I
GES
V
GE(th)
V
GE
=0V , I
C
=250㎂
V
GE
=0V, V
CE
=600V
V
CE
=0V, V
GE
=±20V
V
GE
=V
CE,
I
C
=3mA
V
GE
=15V, I
C
=30A
Collector-Emitter Saturation Voltage
V
CE(sat)
V
GE
=15V, I
C
=60A
V
GE
=15V, I
C
=30A, T
C
= 125℃
Dynamic
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Input Capacitance
Ouput Capacitance
Reverse Transfer Capacitance
Short Circuit Withstand Time
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
C
ies
C
oes
C
res
t
sc
V
CC
=300V, V
GE
=15V, T
C
=100℃
V
CE
=30V, V
GE
=0V, f=1MHz
V
CC
=300V, I
C
=30A, V
GE
=15V,R
G
=10Ω
Inductive Load, T
C
= 125℃ (Note 1)
-
-
-
-
-
-
10
0.55
0.65
1.2
2350
160
95
-
-
-
-
3100
-
-
-
mJ
mJ
mJ
pF
pF
pF
μ
s
V
CC
=300V, I
C
=30A, V
GE
=15V,R
G
=10Ω
Inductive Load, T
C
= 25℃ (Note 1)
-
-
-
-
-
-
-
0.55
0.45
1.0
40
35
180
50
0.75
0.65
1.4
-
-
-
-
mJ
mJ
mJ
ns
ns
ns
ns
V
CC
=300V, V
GE
=15V, I
C
= 30A
-
-
-
-
-
-
-
120
20
60
40
30
170
35
-
-
-
-
-
-
-
nC
nC
nC
ns
ns
ns
ns
600
-
-
4.5
-
-
-
-
-
-
5.5
1.65
2.25
1.9
-
250
±100
7.0
2.1
-
-
V
㎂
nA
V
V
V
V
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Note 1 : Energy loss include tail current and diode reverse recovery.
Marking
2013. 11. 25
Revision No : 1
2/8
KGF30N60KDA
ELECTRICAL CHARACTERISTIC OF DIODE
CHARACTERISTIC
Diode Forward Voltage
SYMBOL
V
F
I
F
= 30A
TEST CONDITION
T
C
=25℃
T
C
=125℃
Diode Reverse Recovery Time
t
rr
V
CE
= 300V
Diode Peak Reverse Recovery Current
I
rr
I
F
= 30A
di/dt = -600A/μ
s
Diode Reverse Recovery Charge
Q
rr
T
C
=125℃
T
C
=25℃
T
C
=125℃
-
-
-
16
620
1160
-
-
nC
-
T
C
=25℃
T
C
=125℃
T
C
=25℃
MIN.
-
-
-
-
-
TYP.
1.7
1.75
80
120
14
MAX.
2.5
V
-
-
ns
-
-
A
UNIT
2013. 11. 25
Revision No : 1
3/8
stm32/stm8
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