DISCRETE SEMICONDUCTORS
DATA SHEET
BUJ303B
Silicon Diffused Power Transistor
Product
specification
March 2002
NXP
Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ303B
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for
use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
control systems, etc.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CBO
V
CEO
I
C
I
CM
P
tot
V
CEsat
h
FEsat
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-Base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
DC current gain
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
0.25
10.5
300
MAX.
1050
1050
400
5
10
100
1.5
-
-
UNIT
V
V
V
A
A
W
V
ns
T
mb
≤
25 ˚C
I
C
= 3 A; I
B
= 1 A
I
C
= 3 A; V
CE
= 1.5 V
I
C
=2.5 A,I
B1
=0.5 A
PINNING - TO220AB
PIN
1
2
3
tab
base
collector
emitter
collector
DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
c
b
1 23
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
CESM
V
CEO
V
CBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
PARAMETER
Collector to emitter voltage
Collector to emitter voltage (open base)
Collector to base voltage (open emitter)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-65
-
MAX.
1050
400
1050
5
10
2
4
100
150
150
UNIT
V
V
V
A
A
A
A
W
˚C
˚C
T
mb
≤
25 ˚C
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Junction to mounting base
Junction to ambient
in free air
CONDITIONS
TYP.
-
60
MAX.
1.25
-
UNIT
K/W
K/W
March 2002
1
Rev 1.000
NXP
Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ303B
STATIC CHARACTERISTICS
T
mb
= 25 ˚C unless otherwise specified
SYMBOL
I
CES
,I
CBO
I
CES
I
CEO
I
EBO
V
CEOsust
V
CEsat
V
BEsat
h
FE
h
FEsat
PARAMETER
Collector cut-off current
1
Collector cut-off current
1
Emitter cut-off current
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
DC current gain
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
= 125 ˚C
V
CEO
= V
CEOMmax
(400V)
V
EB
= 9 V; I
C
= 0 A
I
C
= 300 mA; L = 25 mH
I
C
= 3 A; I
B
= 1 A
I
C
= 1 A; I
B
= 0.2 A
I
C
= 3 A; I
B
= 1 A
I
C
= 10 mA; V
CE
= 5 V
I
C
= 800 mA; V
CE
= 3 V
I
C
= 3 A; V
CE
= 1.5 V
MIN.
-
-
-
-
400
-
-
-
10
23
-
TYP.
-
-
-
-
-
0.25
-
1.0
-
31
10.5
MAX.
1.0
2.0
0.1
0.1
-
1.5
0.5
1.5
-
40
-
UNIT
mA
mA
mA
mA
V
V
V
V
DYNAMIC CHARACTERISTICS
T
mb
= 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
Switching times (resistive load)
t
on
t
s
t
f
t
s
t
f
Turn-on time
Turn-off storage time
Turn-off fall time
Switching times (inductive load)
Turn-off storage time
Turn-off fall time
Switching times (inductive load)
t
s
t
f
Turn-off storage time
Turn-off fall time
CONDITIONS
I
Con
= 2.5 A; I
Bon
= 0.5 A I
Boff
= -1 A;
V
CC
= 250 V;
TYP.
MAX.
UNIT
1
2.5
0.3
-
-
-
µs
µs
µs
I
Con
= 2.5 A; I
Bon
= 0.5 A; -V
BB
= 5 V;
L
C
= 300
µH;
L
B
= 1
µH;
V
CC
= 350 V
I
Con
= 2.5 A; I
Bon
= 0.5 A; -V
BB
= 5 V;
L
C
= 300
µH;
L
B
= 1
µH;
V
CC
= 350 V;
T
j
= 100 ˚C
2
200
-
-
µs
ns
3
300
-
-
µs
ns
1
Measured with half sine-wave voltage (curve tracer).
March 2002
2
Rev 1.000
NXP
Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ303B
100-200R
+ VB
25 mH
+ 50v
IC
90 %
ICon
90 %
10 %
ts
ton
tf
IBon
10 %
Pulse in
50R
Oscilloscope
Horizontal
Oscilloscope
Vertical
C.T.
IB
toff
tr
30ns
-IBoff
Fig.1. Test circuit for V
CEOsust
.
Fig.4. Switching times waveforms with resistive load.
IC / mA
VCC
400
300
LC
IBon
LB
T.U.T.
-VBB
0
VCE / V
min
VCEOsust
Fig.2. Oscilloscope display for V
CEOsust
.
Fig.5. Test circuit inductive load.
V
CC
= 350 V; -V
BE
= 5 V; L
C
= 300 uH; L
B
= 1 uH
VCC
ICon
90 %
IC
RL
VIM
0
tp
IB
RB
T.U.T.
ts
toff
IBon
10 %
tf
t
T
-IBoff
t
Fig.3. Test circuit resistive load. V
IM
= -6 to +8 V
V
CC
= 250 V; t
p
= 20
µs; δ
= t
p
/ T = 0.01.
R
B
and R
L
calculated from I
Con
and I
Bon
requirements.
Fig.6. Switching times waveforms with inductive load.
March 2002
3
Rev 1.000
NXP
Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ303B
120
110
100
90
80
70
60
50
40
30
20
10
0
PD%
Normalised Power Derating
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
VBEsat (V)
0
20
40
60
80
100
Tmb / C
120
140
0.1
1.0
IC (A)
10.0
Fig.7. Normalised power dissipation.
PD% = 100⋅PD/PD
25˚C
= f (T
mb
)
Fig.10. Base-Emitter saturation voltage.
Solid lines = typ values, V
BEsat
= f(IC); at IC/IB =4.
100
hFE
0.5
VCEsat
(V)
VCE = 5 V
10
VCE = 1 V
0.4
0.3
0.2
0.1
1
0.01
0.1
1
IC (A)
10
0
0.1
1.0
IC (A)
10.0
Fig.8. Typical DC current gain. h
FE
= f(I
C
)
parameter V
CE
2
VCEsat
(V)
IC = 1 A 2 A 3 A
Fig.11. Collector-Emitter saturation voltage.
Solid lines = typ values, V
CEsat
= f(IC); at IC/IB =4.
Zth / (K/W)
10
4A
1
D= 0.5
1
0.1
0.2
0.1
0.05
0.02
0
P
D
tp
D=
t
p
T
t
T
0
0.01
0.1
1
IB (A)
10
0.01
1E-06
1E-04
1E-02
t/s
1E+00
Fig.9. Collector-Emitter saturation voltage.
Solid lines = typ values, V
CEsat
= f(IB); T
j
= 25˚C.
Fig.12. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
March 2002
4
Rev 1.000
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