BFU520W
NPN wideband silicon RF transistor
Rev. 1 — 13 January 2014
Product data sheet
1. Product profile
1.1 General description
NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT323
package.
The BFU520W is part of the BFU5 family of transistors, suitable for small signal to
medium power applications up to 2 GHz.
1.2 Features and benefits
Low noise, high breakdown RF transistor
AEC-Q101 qualified
Minimum noise figure (NF
min
) = 0.6 dB at 900 MHz
Maximum stable gain 18.5 dB at 900 MHz
11 GHz f
T
silicon technology
1.3 Applications
Applications requiring high supply voltages and high breakdown voltages
Broadband amplifiers up to 2 GHz
Low noise amplifiers for ISM applications
ISM band oscillators
1.4 Quick reference data
Table 1.
Quick reference data
T
amb
= 25
C unless otherwise specified
Symbol
V
CB
V
CE
V
EB
I
C
P
tot
h
FE
C
c
f
T
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
DC current gain
collector capacitance
transition frequency
T
sp
87
C
I
C
= 5 mA; V
CE
= 8 V
V
CB
= 8 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 8 V; f = 900 MHz
[1]
Conditions
open emitter
open base
shorted base
open collector
Min
-
-
-
-
-
-
60
-
-
Typ
-
-
-
-
5
-
95
0.55
10
Max
24
12
24
2
30
450
200
-
-
Unit
V
V
V
V
mA
mW
pF
GHz
NXP Semiconductors
BFU520W
NPN wideband silicon RF transistor
Table 1.
Quick reference data
…continued
T
amb
= 25
C unless otherwise specified
Symbol
G
p(max)
NF
min
P
L(1dB)
Parameter
maximum power gain
minimum noise figure
output power at 1 dB gain
compression
Conditions
I
C
= 5 mA; V
CE
= 8 V; f = 900 MHz
I
C
= 1 mA; V
CE
= 8 V; f = 900 MHz;
S
=
opt
I
C
= 10 mA; V
CE
= 8 V; Z
S
= Z
L
= 50
;
f = 900 MHz
[2]
Min
-
-
-
Typ
18.5
0.6
7.0
Max
-
-
-
Unit
dB
dB
dBm
[1]
[2]
T
sp
is the temperature at the solder point of the collector lead.
If K > 1 then G
p(max)
is the maximum power gain. If K
1 then G
p(max)
= MSG.
2. Pinning information
Table 2.
Pin
1
2
3
Discrete pinning
Description
base
emitter
collector
Simplified outline
Graphic symbol
3. Ordering information
Table 3.
Ordering information
Package
Name
BFU520W
OM7960
[1]
Type number
Description
plastic surface-mounted package; 3 leads
Customer evaluation kit for BFU520W, BFU530W and BFU550W
[1]
Version
SOT323
-
-
-
The customer evaluation kit contains the following:
a) Unpopulated RF amplifier Printed-Circuit Board (PCB)
b) Unpopulated RF amplifier Printed-Circuit Board (PCB) with emitter degeneration
c) Four SMA connectors for fitting unpopulated Printed-Circuit Board (PCB)
d) BFU520W, BFU530W and BFU550W samples
e) USB stick with data sheets, application notes, models, S-parameter and noise files
4. Marking
Table 4.
BFU520W
Marking
Marking
ZA*
Description
* = t : made in Malaysia
* = w : made in China
Type number
BFU520W
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2014. All rights reserved.
Product data sheet
Rev. 1 — 13 January 2014
2 of 22
NXP Semiconductors
BFU520W
NPN wideband silicon RF transistor
5. Design support
Table 5.
Available design support
Download from the BFU520W product information page on
http://www.nxp.com.
Support item
Device models for Agilent EEsof EDA ADS
SPICE model
S-parameters
Noise parameters
Customer evaluation kit
Solder pattern
Application notes
Available
yes
yes
yes
yes
yes
yes
yes
See
Section 10.1
and
Section 10.2.
See
Section 3
and
Section 10.
Remarks
Based on Mextram device model.
Based on Gummel-Poon device
model.
6. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CB
V
CE
V
EB
I
C
T
stg
V
ESD
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
storage temperature
electrostatic discharge voltage
Human Body Model (HBM) According to JEDEC
standard 22-A114E
Charged Device Model (CDM) According to
JEDEC standard 22-C101B
Conditions
open emitter
open base
shorted base
open collector
Min
-
-
-
-
-
65
-
-
Max
30
16
30
3
50
+150
150
2
Unit
V
V
V
V
mA
C
V
kV
7. Recommended operating conditions
Table 7.
Symbol
V
CB
V
CE
V
EB
I
C
P
i
T
j
P
tot
[1]
Characteristics
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
input power
junction temperature
total power dissipation
T
sp
87
C
[1]
Conditions
open emitter
open base
shorted base
open collector
Z
S
= 50
Min
-
-
-
-
-
-
40
-
Typ
-
-
-
-
-
-
-
-
Max
24
12
24
2
30
10
+150
450
Unit
V
V
V
V
mA
dBm
C
mW
T
sp
is the temperature at the solder point of the collector lead.
BFU520W
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2014. All rights reserved.
Product data sheet
Rev. 1 — 13 January 2014
3 of 22
NXP Semiconductors
BFU520W
NPN wideband silicon RF transistor
8. Thermal characteristics
Table 8.
Symbol
R
th(j-sp)
[1]
Thermal characteristics
Parameter
thermal resistance from junction to solder point
Conditions
[1]
Typ
140
Unit
K/W
T
sp
is the temperature at the solder point of the collector lead.
T
sp
has the following relation to the ambient temperature T
amb
:
T
sp
= T
amb
+ P
R
th(sp-a)
With P being the power dissipation and R
th(sp-a)
being the thermal resistance between the solder point and
ambient. R
th(sp-a)
is determined by the heat transfer properties in the application.
The heat transfer properties are set by the application board materials, the board layout and the
environment e.g. housing.
Fig 1.
Power derating curve
9. Characteristics
Table 9.
Characteristics
T
amb
= 25
C unless otherwise specified
Symbol
Parameter
Conditions
I
C
= 100 nA; I
E
= 0 mA
I
C
= 150 nA; I
B
= 0 mA
I
E
= 0 mA; V
CB
= 8 V
I
C
= 5 mA; V
CE
= 8 V
V
EB
= 0.5 V; f = 1 MHz
V
CE
= 8 V; f = 1 MHz
V
CB
= 8 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 8 V; f = 900 MHz
Min Typ
24
12
-
-
60
-
-
-
-
-
-
5
<1
95
Max Unit
-
-
30
-
200
pF
pF
pF
GHz
V
V
mA
nA
V
(BR)CBO
collector-base breakdown voltage
V
(BR)CEO
collector-emitter breakdown voltage
I
C
I
CBO
h
FE
C
e
C
re
C
c
f
T
collector current
collector-base cut-off current
DC current gain
emitter capacitance
feedback capacitance
collector capacitance
transition frequency
0.64 -
0.35 -
0.55 -
10
-
BFU520W
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2014. All rights reserved.
Product data sheet
Rev. 1 — 13 January 2014
4 of 22
NXP Semiconductors
BFU520W
NPN wideband silicon RF transistor
Table 9.
Characteristics
…continued
T
amb
= 25
C unless otherwise specified
Symbol
G
p(max)
Parameter
maximum power gain
Conditions
f = 433 MHz; V
CE
= 8 V
I
C
= 1 mA
I
C
= 5 mA
I
C
= 10 mA
f = 900 MHz; V
CE
= 8 V
I
C
= 1 mA
I
C
= 5 mA
I
C
= 10 mA
f = 1800 MHz; V
CE
= 8 V
I
C
= 1 mA
I
C
= 5 mA
I
C
= 10 mA
s
21
2
insertion power gain
f = 433 MHz; V
CE
= 8 V
I
C
= 1 mA
I
C
= 5 mA
I
C
= 10 mA
f = 900 MHz; V
CE
= 8 V
I
C
= 1 mA
I
C
= 5 mA
I
C
= 10 mA
f = 1800 MHz; V
CE
= 8 V
I
C
= 1 mA
I
C
= 5 mA
I
C
= 10 mA
NF
min
minimum noise figure
f = 433 MHz; V
CE
= 8 V;
S
=
opt
I
C
= 1 mA
I
C
= 5 mA
I
C
= 10 mA
f = 900 MHz; V
CE
= 8 V;
S
=
opt
I
C
= 1 mA
I
C
= 5 mA
I
C
= 10 mA
f = 1800 MHz; V
CE
= 8 V;
S
=
opt
I
C
= 1 mA
I
C
= 5 mA
I
C
= 10 mA
-
-
-
0.8
0.9
1.0
-
-
-
dB
dB
dB
-
-
-
0.6
0.8
0.9
-
-
-
dB
dB
dB
-
-
-
0.5
0.7
0.9
-
-
-
dB
dB
dB
-
-
-
6
11
-
-
dB
dB
dB
10.5 -
-
-
-
9
-
dB
dB
dB
15.5 -
16.5 -
-
-
-
10.5 -
20
22
-
-
dB
dB
dB
[1]
[1]
[1]
Min Typ
-
-
-
-
-
-
-
-
-
16
24
13
Max Unit
-
-
-
dB
dB
dB
dB
dB
dB
dB
dB
dB
22.5 -
18.5 -
19.5 -
11
14
13
-
-
-
BFU520W
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2014. All rights reserved.
Product data sheet
Rev. 1 — 13 January 2014
5 of 22
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