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BFU590G_15

Description
NPN wideband silicon RF transistor
File Size284KB,19 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
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BFU590G_15 Overview

NPN wideband silicon RF transistor

BFU590G
NPN wideband silicon RF transistor
Rev. 1 — 28 April 2014
Product data sheet
1. Product profile
1.1 General description
NPN silicon microwave transistor for high speed, medium power applications in a plastic,
4-pin SOT223 package.
The BFU590G is part of the BFU5 family of transistors, suitable for small signal to medium
power applications up to 2 GHz.
1.2 Features and benefits
Medium power, high linearity, high breakdown voltage RF transistor
AEC-Q101 qualified
Maximum stable gain 13 dB at 900 MHz
P
L(1dB)
21.5 dBm at 900 MHz
8.5 GHz f
T
silicon technology
1.3 Applications
Automotive applications
Broadband amplifiers
Medium power amplifiers (500 mW at a frequency of 433 MHz or 866 MHz)
Large signal amplifiers for ISM applications
1.4 Quick reference data
Table 1.
Quick reference data
T
amb
= 25
C unless otherwise specified
Symbol
V
CB
V
CE
V
EB
I
C
P
tot
h
FE
C
c
f
T
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
DC current gain
collector capacitance
transition frequency
T
sp
90
C
I
C
= 80 mA; V
CE
= 8 V
V
CB
= 8 V; f = 1 MHz
I
C
= 80 mA; V
CE
= 8 V; f = 900 MHz
[1]
Conditions
open emitter
open base
shorted base
open collector
Min
-
-
-
-
-
-
60
-
-
Typ
-
-
-
-
80
-
95
1.9
8.5
Max
24
12
24
2
200
130
-
-
Unit
V
V
V
V
mA
2000 mW
pF
GHz
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