PD - 95245
IRF7606PbF
Generation V Technology
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Ultra Low On-Resistance
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P-Channel MOSFET
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Very Small SOIC Package
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Low Profile (<1.1mm)
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Available in Tape & Reel
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Fast Switching
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Lead-Free
Description
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HEXFET
®
Power MOSFET
S
1
2
3
4
8
7
A
D
D
D
D
S
S
G
V
DSS
= -30V
R
DS(on)
= 0.09Ω
6
5
Top View
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The new Micro8 package, with half the footprint area
of the standard SO-8, provides the smallest footprint
available in an SOIC outline. This makes the Micro8
an ideal device for applications where printed circuit
board space is at a premium. The low profile (<1.1mm)
of the Micro8 will allow it to fit easily into extremely thin
application environments such as portable electronics
and PCMCIA cards.
Micro8
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
V
GSM
dv/dt
T
J
, T
STG
Drain-Source Voltage
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10µS
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
-30
-3.6
-2.9
-29
1.8
1.1
14
± 20
30
-5.0
-55 to + 150
240 (1.6mm from case)
Units
V
A
W
W
mW/°C
V
V
V/ns
°C
Thermal Resistance
Parameter
R
θJA
Maximum Junction-to-Ambient
Max.
70
Units
°C/W
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
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1
5/13/04
IRF7606PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-30
–––
–––
-1.0
2.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
-0.024
0.075
0.130
–––
–––
–––
–––
–––
–––
20
2.1
7.6
13
20
43
39
520
300
140
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= -1mA
0.09
V
GS
= - 10V, I
D
= -2.4A
Ω
0.15
V
GS
= -4.5V, I
D
= -1.2A
–––
V
V
DS
= V
GS
, I
D
= -250µA
–––
S
V
DS
= -10V, I
D
= -1.2A
-1.0
V
DS
= -24V, V
GS
= 0V
µA
-25
V
DS
= -24V, V
GS
= 0V, T
J
= 125°C
-100
V
GS
= -20V
nA
100
V
GS
= 20V
30
I
D
= -2.4A
3.1
nC V
DS
= -24V
11
V
GS
= -10V, See Fig. 9
–––
V
DD
= -10V
–––
I
D
= -2.4A
ns
–––
R
G
= 6.0Ω
–––
R
D
= 4.0Ω
–––
V
GS
= 0V
–––
pF
V
DS
= -25V
–––
ƒ = 1.0MHz, See Fig. 8
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
43
50
-1.8
A
-29
-1.2
64
76
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -2.4A, V
GS
= 0V
T
J
= 25°C, I
F
= -2.4A
di/dt = -100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 10 )
Pulse width
≤
300µs; duty cycle
≤
2%.
Surface mounted on FR-4 board, t
≤
10sec.
I
SD
≤
-2.4A, di/dt
≤
-130A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
2
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IRF7606PbF
100
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
TOP
100
-I D , Drain-to-Source Current (A)
10
-I D , Drain-to-Source Current (A)
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
TOP
10
1
0.1
-3.0V
1
20µs PULSE WIDTH
T
J
= 25°C
A
10
1
0.1
1
-3.0V
20µs PULSE WIDTH
T
J
= 150°C
A
10
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
100
-I
D
, Drain-to-Source Current (A)
-I
SD
, Reverse Drain Current (A)
10
T
J
= 25°C
10
T
J
= 150°C
T
J
= 150°C
T
J
= 25°C
1
1
V
DS
= -10V
20µs PULSE WIDTH
3.0
3.5
4.0
4.5
5.0
5.5
6.0
A
0.1
0.4
0.6
0.8
1.0
1.2
V
GS
= 0V
1.4
A
1.6
-V
GS
, Gate-to-Source Voltage (V)
-V
SD
, Source-to-Drain Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Source-Drain Diode
Forward Voltage
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IRF7606PbF
R
DS(on)
, Drain-to-Source On Resistance
( Ω )
2.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= -2.7A
0.3
1.5
0.2
VGS = -4.5V
1.0
0.1
0.5
VGS = -10V
0.0
0
2
-I
0.0
-60
-40
-20
0
20
40
60
80
V
GS
= -10V
100 120 140 160
A
4
6
8
10
12
A
T
J
, Junction Temperature (°C)
,
, Drain Current (A)
Fig 5.
Normalized On-Resistance
Vs. Temperature
Fig 6.
Typical On-Resistance Vs. Drain
Current
0.14
R
DS(on)
, Drain-to-Source On Resistance
( Ω )
0.12
0.10
I
0.08
= -3.6A
0.06
0.04
2
-V
6
10
14
A
/5
, Gate-to-Source Voltage (V)
Fig 7.
Typical On-Resistance Vs. Gate
Voltage
4
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IRF7606PbF
1000
-V
GS
, Gate-to-Source Voltage (V)
800
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= -2.7A
V
DS
= -24V
V
DS
= -15V
16
C, Capacitance (pF)
C
iss
600
12
C
oss
400
8
200
C
rss
4
0
1
10
100
A
0
0
5
10
15
FOR TEST CIRCUIT
SEE FIGURE 9
20
25
30
A
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 8.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 9.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
P
DM
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.01
0.1
1
10
100
Thermal Response (Z
thJA
)
0.0001
0.001
t
1
, Rectangular Pulse Duration (sec)
Fig 10.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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