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IRF7815PBF_15

Description
5.1 A, 150 V, 0.043 ohm, N-CHANNEL, Si, POWER, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size261KB,9 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

IRF7815PBF_15 Overview

5.1 A, 150 V, 0.043 ohm, N-CHANNEL, Si, POWER, MOSFET

IRF7815PBF_15 Parametric

Parameter NameAttribute value
Number of terminals3
Minimum breakdown voltage150 V
Processing package descriptionLEAD FREE, SOP-8
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE TIN
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE WITH BUILT-IN DIODE
Shell connectionDRAIN
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum ambient power consumption2.5 W
Channel typeN-CHANNEL
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeGENERAL PURPOSE POWER
Maximum leakage current5.1 A
Rated avalanche energy529 mJ
Maximum drain on-resistance0.0430 ohm
Maximum leakage current pulse41 A
PD - 96284
IRF7815PbF
HEXFET
®
Power MOSFET
Applications
l
Synchronous MOSFET for Notebook
Processor Power
l
Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
Benefits
l
Very Low R
DS(on)
at 10V V
GS
l
Low Gate Charge
l
Fully Characterized Avalanche Voltage
and Current
l
20V V
GS
Max. Gate Rating
R
DS(on)
max
Qg (typ.)
150V 43m @V
GS
= 10V 25nC
V
DSS
:
8
7
S
S
S
G
1
2
3
4
A
A
D
D
D
D
6
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Max.
150
± 20
5.1
4.1
41
2.5
1.6
0.02
-55 to + 150
Units
V
f
Power Dissipation
f
Power Dissipation
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
c
A
W
W/°C
°C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
R
θJL
R
θJA
Junction-to-Drain Lead
Junction-to-Ambient
f
g
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes

through
…
are on page 9
www.irf.com
1
12/01/09

IRF7815PBF_15 Related Products

IRF7815PBF_15 IRF7815PBF
Description 5.1 A, 150 V, 0.043 ohm, N-CHANNEL, Si, POWER, MOSFET 5.1 A, 150 V, 0.043 ohm, N-CHANNEL, Si, POWER, MOSFET
Number of terminals 3 3
surface mount Yes YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Shell connection DRAIN DRAIN
Number of components 1 1
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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